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US 9,754,859 B2Granted
Semiconductor device
AssigneeInfineon Technologies AG
InventorsWalter Rieger, Franz Hirler, Martin Poelzl, Manfred Kotek
Life of this patent
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Abstract
A semiconductor device includes a semiconductor substrate, a doped zone, a polysilicon layer and an elongate plug structure. The doped zone is within the semiconductor substrate. The polysilicon layer is disposed in a trench electrically isolated from the semiconductor substrate by an insulating layer. The elongate plug structure extends in a lateral direction in or above the semiconductor substrate. The elongate plug structure provides electrical connection between the doped zone and the polysilicon layer.
Claims9
A vertical power semiconductor device comprising:
- a semiconductor substrate;
- a doped zone within the semiconductor substrate, the doped zone adjoining a first surface of the semiconductor substrate;
- a polysilicon layer in a trench at a front side of the semiconductor substrate, the polysilicon layer being electrically isolated from the semiconductor substrate by an insulating layer;
- a patterned conductive structure, wherein plug structures form parts of the same patterned conductive structure, a first portion of the plug structures forming a vertical electrical connection between a semiconductor zone and a metallization layer positioned above the semiconductor zone, and a second portion of the plug structures comprising an elongate plug structure extending in a lateral direction in or above the semiconductor substrate, the elongate plug structure providing electrical connection between the doped zone and the polysilicon layer, and wherein an electric contact interface between the elongate plug structure and the polysilicon layer is at or below the first surface;
- and
- a drain terminal on a rear side of the semiconductor substrate.
3 more elements
Dependencies are inferred from the claim text.