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US 9,754,842 B2Granted
FinFET with dummy gate on non-recessed shallow trench isolation (STI)
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChi-Wen Liu, Chao-Hsiung Wang
Life of this patent
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Abstract
An embodiment fin field effect transistor (FinFET) device includes fins formed from a semiconductor substrate, a non-recessed shallow trench isolation (STI) region disposed between the fins, and a dummy gate disposed on the non-recessed STI region.
Claims20
A method of forming a fin field effect transistor (FinFET) device, the method comprising:
- forming fins from a semiconductor substrate;
- forming a non-recessed shallow trench isolation (STI) region between the fins;
- forming a dummy gate on the non-recessed STI region;
- and
- protecting the non-recessed STI region while recessed STI regions are formed, wherein the fins comprise a first fin, the first fin having a first longitudinal axis, the first longitudinal axis intersecting the non-recessed STI region and at least one of the recessed STI regions.
2 more elements
A method comprising:
- forming a first fin and a second fin extending above a substrate, the first fin and the second fin having collinear longitudinal axes;
- forming a dielectric material surrounding and between the first fin and the second fin;
- protecting a first portion of the dielectric material between the first fin and the second fin with a protective layer;
- recessing the unprotected portions of the dielectric material to form recessed shallow trench isolation (STI) regions, the first portion of the dielectric material forming a non-recessed STI region;
- removing the protective layer from over the first portion of the dielectric material;
- and
- forming gates over the first fin, the second fin, and the non-recessed STI region.
4 more elements
A method comprising:
- forming a first fin and a second fin extending above a substrate, the first fin having a first longitudinal axis;
- forming shallow trench isolation (STI) regions surrounding and between the first fin and the second fin;
- recessing first portions of the STI regions to form recessed STI regions while a second portion of the STI regions remains non-recessed, the second portion forming a non-recessed STI region, the first longitudinal axis intersecting the non-recessed STI region and at least one of the recessed STI regions;
- forming active gates over the first fin and the second fin;
- and
- forming a dummy gate over the non-recessed STI region.
3 more elements
Dependencies are inferred from the claim text.