Controlling within-die uniformity using doped polishing material
AssigneeGlobalfoundries Inc.
InventorsHaigou Huang, Jinping Liu, Huang Liu, Taifong Chao
Life of this patent
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Abstract
Various embodiments include methods and integrated circuit structures. In some cases, a method of forming an integrated circuit structure can include: forming a mask over an oxide layer and an underlying set of fin structures, the set of fin structures including a plurality of fins each having a substrate base and a silicide layer over the substrate base; implanting the oxide layer through an opening in the mask; removing the mask; polishing the oxide layer overlying the set of fin structures after removing the mask to expose the set of fin structures; and forming a nitride layer over the set of fin structures.
Claims16
A method of forming an integrated circuit (IC) structure, the method comprising:
- forming a mask over an oxide layer and an underlying set of fin structures, the set of fin structures including a plurality of fins each having a substrate base and a silicide layer over the substrate base;
- implanting the oxide layer through an opening in the mask;
- removing the mask;
- polishing the oxide layer overlying the set of fin structures after removing the mask to expose the set of fin structures;
- and
- forming a nitride layer over the set of fin structures.
A method of forming an integrated circuit (IC) structure, the method comprising:
- forming a mask over an oxide layer and an underlying set of fin structures, the set of fin structures including a plurality of fins each having a substrate base and a silicide layer over the substrate base;
- implanting the oxide layer through an opening in the mask with ions of at least one of carbon, phosphorous or boron;
- removing the mask;
- polishing the oxide layer overlying the set of fin structures after removing the mask to expose the set of fin structures;
- and
- forming a nitride layer over the set of fin structures, wherein a height of the nitride layer is substantially uniform across the set of fin structures.
Dependencies are inferred from the claim text.