Semiconductor device and method comprising redistribution layers

A method of making a semiconductor package, comprising:

• placing a single layer dielectric film on a temporary carrier substrate, the single layer dielectric film comprising a first surface and a second surface opposite the first surface;
• placing a plurality of semiconductor die directly on the first surface of the single layer dielectric film opposite the second surface of the single layer dielectric film attached to the temporary carrier substrate;
• curing the single layer dielectric film after placing the plurality of semiconductor die on the first surface of the single layer dielectric film to lock the plurality of semiconductor die in place on the single layer dielectric film;
• encapsulating the plurality of semiconductor die directly on the single layer dielectric film with an encapsulant;
• patterning the single layer dielectric film utilizing a mask-less patterning technique to form a via hole that extends from the first surface of the cured single layer dielectric film to the second surface of the cured single layer dielectric film after removing the temporary carrier substrate;
• and
• forming a conductive layer directly on, substantially parallel to, and extending across, the second surface of the patterned single layer dielectric film, within the vial hole, and over the plurality of semiconductor die.

A method of making a semiconductor package, comprising:

• placing a single layer dielectric film on a temporary carrier substrate, the single layer dielectric film comprising a first surface and a second surface opposite the first surface;
• placing a plurality of semiconductor die directly on the first surface of the single layer dielectric film with the plurality of semiconductor die disposed over the temporary carrier substrate;
• curing the single layer dielectric film after placing the plurality of semiconductor die on the surface of the single layer dielectric film;
• encapsulating the plurality of semiconductor die on the single layer dielectric film with an encapsulant while the temporary carrier substrate supports the single layer dielectric film and the plurality of semiconductor die;
• patterning the single layer dielectric film and leaving a portion of the single layer dielectric film disposed over an active surface of the plurality of semiconductor die;
• and
• forming a conductive layer directly on, and extending across, the second surface of the patterned single layer dielectric film and over the plurality of semiconductor die.