Method for manufacturing semiconductor chip that includes dividing substrate by etching groove along cutting region of substrate combined with forming modified region by laser irradiating along cutting region in substrate
AssigneeFuji Xerox Co., Ltd.
InventorsTakahiro Hashimoto, Kenichi Ono, Michiaki Murata, Hideyuki Ikoma, Tsutomu Otsuka
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Abstract
A method for manufacturing a semiconductor chip includes forming at least a portion of a front-side groove by anisotropic dry etching from a front surface of a substrate along a cutting region; forming a modified region in the substrate along the cutting region by irradiating the inside of the substrate with a laser along the cutting region; and dividing the substrate along the cutting region by applying stress to the substrate.
Claims12
A method for manufacturing a semiconductor chip, wherein the method comprises:
- forming at least a portion of a front-side groove by anisotropic dry etching from a front surface of a substrate along a cutting region;
- forming a modified region in the substrate along the cutting region by irradiating the inside of the substrate, from a back surface of the substrate, with a laser along the cutting region;
- and
- dividing the substrate along the cutting region by applying stress to the substrate,
- wherein the front-side groove includes a first groove portion extending downward from the front surface of the substrate and a second groove portion disposed below the first groove portion, communicating with the first groove portion, and having a width wider than the width of the first groove portion.
A method for manufacturing a semiconductor chip, the method comprising:
- forming a first groove portion from a front surface of a substrate by first anisotropic dry etching along a cutting region;
- forming a second groove portion communicating with the first groove portion below the first groove portion by second anisotropic dry etching or isotropic dry etching to form a groove portion wider than that formed by the first anisotropic dry etching;
- forming a modified region in the substrate along the cutting region by irradiating the inside of the substrate with a laser along the cutting region;
- and
- dividing the substrate along the cutting region by applying stress to the substrate.
A method for manufacturing a semiconductor chip, wherein the method comprises:
- forming at least a portion of a front-side groove by anisotropic dry etching from a front surface of a substrate along a cutting region;
- forming a modified region in the substrate along the cutting region by irradiating the inside of the substrate with a laser along the cutting region;
- and
- dividing the substrate along the cutting region by applying stress to the substrate,
- wherein the modified region includes plural modified marks formed at a predetermined distance in the thickness direction of the substrate, and
- wherein the front-side groove includes a first groove portion extending downward from the front surface of the substrate and a second groove portion disposed below the first groove portion, communicating with the first groove portion, and having a width wider than the width of the first groove portion.
Dependencies are inferred from the claim text.