Semiconductor device and fabrication method thereof

A semiconductor device, comprising:

• a gate electrode over semiconductor substrate;
• a metal-semiconductor compound film on the gate electrode, the metal-semiconductor layer including a first metal and silicon;
• a dielectric layer enclosing the gate electrode and exposing a portion of a surface of the metal-semiconductor compound film;
• a cover layer on the portion of the surface of the metal-semiconductor compound film, and exposing an upper surface of the dielectric layer, wherein the cover layer has an opening partially exposing the portion of the surface of the metal-semiconductor compound film, and wherein the cover layer includes the first metal, silicon, and at least one of nitrogen, oxygen or carbon;
• an inter-layered dielectric (ILD) over the dielectric layer, wherein the ILD has a through hole connecting the opening of the cover layer;
• and
• a conductive contact electrically connected to the metal-semiconductor compound film via the through hole of the ILD and the opening of the cover layer.

A semiconductor device, comprising:

• a semiconductor substrate having a memory region and a peripheral region;
• a plurality of gate electrodes in the memory region and over the semiconductor substrate;
• a plurality of metal-semiconductor compound films on the gate electrodes, respectively;
• a dielectric layer enclosing the gate electrodes and exposing a portion of surfaces of the metal-semiconductor compound films;
• and
• a plurality of cover layers on the portion of the surfaces of the metal-semiconductor compound films, wherein the plurality of cover layers include at least one of a metal oxide, a metal nitride, a metal oxynitride, or a metal carbide.