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US 9,754,826 B2Granted
Semiconductor devices and methods of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJong-Won Hong, Hei-Seung Kim, Kyoung-Hee Nam, In-Sun Park, Jong-Myeong Lee
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Abstract
A semiconductor device includes a metal pattern filling a trench formed through at least a portion of an insulating interlayer on a substrate and including copper, and a wetting improvement layer pattern in the metal pattern including at least one of tantalum, tantalum nitride, titanium, titanium nitride, ruthenium, cobalt and manganese.
Claims8
A method of manufacturing a semiconductor device, comprising:
- forming a trench on an insulating interlayer on a substrate;
- forming a first seed layer on an inner wall of the trench and on the insulating interlayer, the first seed layer having a first thickness on an upper portion of the trench greater than a second thickness on a lower portion of the trench;
- forming a preliminary metal layer filling the lower portion of the trench by performing a reflow process on the first seed layer;
- forming a wetting improvement layer on a portion of the preliminary metal layer on the upper portion of the trench;
- and
- forming a metal layer filling the trench by an electrolytic plating process.
3 more elements
Dependencies are inferred from the claim text.