Composite substrate and method for producing same
AssigneeKYOCERA Corporation
InventorsHideki Matsushita, Masanobu Kitada
Life of this patent
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Abstract
A composite substrate 1 according to the present invention comprises: a supporting substrate 10 that is formed of an insulating material; a semiconductor part 20 that is disposed over the supporting substrate 10; and interfacial inclusions 30 that are present at the interface between the supporting substrate 10 and the semiconductor part 20 and contains Ni and Fe so that the ratio of Ni to Fe is 0.4 or more. Consequently, the present invention is able to provide a highly reliable composite substrate wherein the interfacial inclusions 30 are prevented from diffusing into the semiconductor part 20.
Claims7
A composite substrate comprising:
- a supporting substrate comprising a single crystal of an insulating material;
- a silicon semiconductor portion on the supporting substrate;
- and
- interfacial inclusions present in a density of 1012 atoms/cm2 or less and located at an interface between the supporting substrate and the silicon semiconductor portion, the interfacial inclusions containing Ni and Fe, and the ratio of Ni to Fe being 0.4 or more.
A method for producing a composite substrate, comprising:
- a preparation step of preparing a supporting substrate comprising a single crystal of an insulating material and a single-crystal silicon semiconductor substrate;
- an activation step of individually irradiating a main surface of the supporting substrate and a main surface of the silicon semiconductor substrate using a fast atom beam (FAB) gun to activate both of the main surfaces with the silicon the semiconductor substrate and the supporting substrate not facing each other to form an activated main surface of the silicon semiconductor substrate and an activated main surface of the supporting substrate;
- a metal supply step of supplying a metal containing Ni and Fe to at least one of the activated main surface of the supporting substrate and the activated main surface of the silicon semiconductor substrate, the metal being composed of a metal element other than main components contained in the supporting substrate and the silicon semiconductor substrate;
- a bonding step of bringing the activated main surface of the silicon semiconductor substrate and the activated main surface of the supporting substrate into contact with each other at normal temperature to bond the silicon semiconductor substrate and the supporting substrate together;
- and
- a thickness reduction step of reducing the thickness of the silicon semiconductor substrate from the other main surface of the silicon semiconductor substrate to form the silicon semiconductor substrate to a silicon semiconductor portion to form a composite substrate comprising a supporting substrate comprising a single crystal of an insulating material, a silicon semiconductor portion on the supporting substrate, and interfacial inclusions located at an interface between the supporting substrate and the silicon semiconductor portion in a density of 1012 atoms/cm2 or less, the interfacial inclusions containing Ni and Fe, and the ratio of Ni to Fe being 0.4 or more.
Dependencies are inferred from the claim text.