Integrated passive device having improved linearity and isolation

A structure for improved electrical signal isolation between radio frequency (RF) integrated passive devices (IPDs), said structure comprising:

• a non-recrystallized amorphized region in a semiconductor substrate that does not include an active device, such that said non-recrystallized amorphized region is not subject to high annealing temperatures associated with active device region doping;
• said non-recrystallized amorphized region having a substantially uniform thickness;
• a dielectric layer formed over said non-recrystallized amorphized region;
• said RF IPDs formed over said dielectric layer;
• a plurality of charge carrier traps at an interface between said non-recrystallized amorphized region and said dielectric layer, wherein a Fermi potential at a top surface of said substrate is pinned by said plurality of charge carrier traps such that depletion of said substrate of carriers will not be modulated by signals applied to said RF IPDs.