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US 9,754,805 B1Granted
Packaging method and structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Hua Yu, Ching-Hua Hsieh, Chung-Shi Liu, Ming-Da Cheng
Life of this patent
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Abstract
A system and method for manufacturing a semiconductor device are provided. In an embodiment a first semiconductor device and a second semiconductor device are encapsulated with an encapsulant. A dielectric layer is formed over the encapsulant, the first semiconductor device, and the second semiconductor device. The dielectric layer is planarized in order to reset the planarity of the dielectric layer.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- encapsulating a first semiconductor device and a second semiconductor device with an encapsulant;
- applying a dielectric material over the first semiconductor device and the second semiconductor device after the encapsulating the first semiconductor device and the second semiconductor device, the dielectric material having a non-planar surface facing away from the first semiconductor device and the second semiconductor device;
- patterning the dielectric material to form a first opening exposing a first contact on the first semiconductor device and a second opening exposing a second contact on the second semiconductor device;
- forming a conductive material in the first opening, in the second opening, and extending along the non-planar surface of the dielectric material;
- planarizing the dielectric material after the applying the dielectric material, the planarizing removing the non-planar surface of the dielectric material and portions of the conductive material extending along the non-planar surface of the dielectric material;
- and
- forming a redistribution layer over the dielectric material after the planarizing the dielectric material, wherein the redistribution layer is in electrical connection with the first semiconductor device and the second semiconductor device.
4 more elements
A method of manufacturing a semiconductor device, the method comprising:
- encapsulating a first semiconductor device and a second semiconductor device with an encapsulant;
- applying a dielectric material over the first semiconductor device, the second semiconductor device, and the encapsulant, wherein the dielectric material has a non-planar surface facing away from the first semiconductor device and the second semiconductor device;
- patterning the dielectric material to form a first opening to a first contact on the first semiconductor device and a second opening to a second contact on the second semiconductor device;
- forming a conductive material over the dielectric material, the conductive material having a first portion filling the first opening, a second portion filling the second opening, and a third portion extending along the non-planar surface of the dielectric material;
- and
- planarizing the dielectric material and the conductive material such that top surfaces of the dielectric material, the first portion of the conductive material, and the second portion of the conductive material are level, wherein, after the planarizing the dielectric material and the conductive material, the third portion of the conductive material is removed, the first portion of the conductive material is isolated from the second portion of the conductive material within the dielectric material, and the dielectric material has an increased planarity.
3 more elements
A method of manufacturing a semiconductor device, the method comprising:
- applying a photosensitive polybenzoxazole over a first semiconductor device, a second semiconductor device, and an encapsulant between the first semiconductor device and the second semiconductor device, wherein the photosensitive polybenzoxazole has a non-planar surface after the applying the photosensitive polybenzoxazole;
- patterning the photosensitive polybenzoxazole to form an first opening and a second opening through the photosensitive polybenzoxazole;
- forming a first conductive material in the first opening, in the second opening, and extending along the non-planar surface of the photosensitive polybenzoxazole;
- and
- resetting the planarity of the photosensitive polybenzoxazole using a planarization process, the planarization process removing the non-planar surface of the photosensitive polybenzoxazole and portions of the first conductive material extending along the non-planar surface of the photosensitive polybenzoxazole, wherein top surfaces of the first conductive material in the first opening, the first conductive material in the second opening, and the photosensitive polybenzoxazole are level after the planarization process.
2 more elements
Dependencies are inferred from the claim text.