Fabrication method of interconnect structure
AssigneeSemiconductor Manufacturing International (Shanghai) Corporation
InventorsChenglong Zhang, Haiyang Zhang
Life of this patent
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Abstract
A method for forming an interconnect structure is provided. The method includes providing a substrate with a surface; and forming a metal layer covering the surface of the substrate and with a desired grain size to reduce grain boundary scattering of the interconnect structure subsequently formed with the metal layer. The method also includes etching the metal layer to form a plurality of metal lines on the surface of the substrate and a plurality of metal pillars on each of the plurality of the metal lines of the interconnect structure; and forming a dielectric layer covering the surface of the substrate, surfaces of the metal lines, and side surfaces of the metal pillars.
Claims15
A method for fabricating an interconnect structure, comprising:
- providing a substrate with a surface;
- forming a metal layer covering the surface of the substrate and with a desired grain size to reduce grain boundary scattering of the interconnect structure subsequently formed with the metal layer;
- forming a first mask film on the metal layer;
- forming a second mask film on the first mask film;
- etching the metal layer to form a plurality of metal lines on the surface of the substrate and a plurality of metal pillars on each of the plurality of the metal lines of the interconnect structure, wherein the positions of the plurality of metal lines corresponds to the positions of the first mask film and positions of the plurality of metal pillars corresponds to the positions of the second mask film;
- and
- forming a dielectric layer covering the surface of the substrate, surfaces of the metal lines, and side surfaces of the metal pillars.
Dependencies are inferred from the claim text.