Hard mask removal scheme
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYing-Hsueh Changchien, Yu-Ming Lee, Chi-Ming Yang
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Abstract
A method for hard mask layer removal includes dispensing a chemical on a hard mask layer, in which the chemical includes an acidic chemical. The chemical is drained from a chamber after hard mask removal. Using chemical including acidic chemical for hard mask layer removal is cheaper and the resource can be easily generated by equipment. Thus the chemical for hard mask layer removal can be drained directly and need not be recycled.
Claims20
A method for fabricating a semiconductor device, the method comprising:
- forming a hard mask layer on a dielectric layer;
- patterning the hard mask layer to expose a portion of the dielectric layer;
- removing the portion of the dielectric layer exposed by the hard mask layer;
- dispensing an acidic chemical on the patterned hard mask layer for removing the patterned hard mask layer;
- and
- draining the acidic chemical from a chamber, wherein the acidic chemical drained from the chamber is not recycled for hard mask removal.
A method for removing a hard mask layer, comprising:
- patterning the hard mask layer;
- dispensing an acidic chemical and an oxidant on the patterned hard mask layer to remove the patterned hard mask layer;
- and
- draining the acidic chemical and the oxidant from a chamber where the dispensing is performed, wherein the acidic chemical drained from the chamber is not recycled for hard mask removal.
A method for removing a metal nitride layer, comprising:
- mixing an oxidant and an acid solution;
- dispensing a mixture of the oxidant and the acid solution on the metal nitride layer to remove the metal nitride layer;
- and
- draining the mixture of the oxidant and the acid solution from a chamber where the dispensing is performed, wherein the acidic solution drained from the chamber is not recycled for metal nitride removal.
Dependencies are inferred from the claim text.