Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device, comprising:

• forming a mask layer on a layer to be etched, the mask layer containing tungsten and carbon, a composition ratio of the carbon being less than 50%;
• patterning the mask layer;
• and
• performing a dry etching to the layer to be etched using the mask layer being patterned, and forming a hole or a slit in the layer to be etched.

A method for manufacturing a semiconductor device, comprising:

• forming a mask layer on a layer to be etched, the mask layer containing tungsten and boron, containing tungsten and carbon, or containing tungsten, boron and carbon, the mask layer having a full width at half maximum being not less than 0.5° in XRD (X-ray diffraction) peaks measured by 2θ/θ method of XRD analysis in which 2θ is between 30° and 50°;
• patterning the mask layer;
• and
• performing a dry etching to the layer to be etched using the mask layer being patterned, and forming a hole or a slit in the layer to be etched.