Selective deposition utilizing masks and directional plasma treatment

A selective deposition method, comprising:

• depositing a mask material on a substrate;
• patterning the mask material to form a patterned mask, wherein regions of the substrate are exposed through the patterned mask after the patterning;
• implanting ions into the patterned mask and the exposed regions of the substrate;
• removing the patterned mask from the substrate to expose non-implanted regions of the substrate;
• and
• performing an atomic layer deposition (ALD) process by providing a reactant gas mixture to the implanted and non-implanted regions of the substrate, the reactant gas mixture promoting deposition of a material on the non-implanted regions of the substrate while implanted regions remain substantially free of deposited material.

A selective deposition method, comprising:

• implanting fluorine ions into a patterned mask and a first region of a substrate exposed through the patterned mask, the fluorine ions implanted at ion dosage less than about 5×1016 (ions/cm2);
• removing the patterned mask from the substrate to expose a second region of the substrate, the second region shielded from fluorine ions during implanting of the fluorine ions in the first region;
• and
• providing a reactant gas mixture promoting deposition of a material using an ALD process while maintaining the substrate at a temperature of less than about 500° Celsius, the ALD process promoting deposition of the material on the second region and not the first region, wherein the first region remains substantially free of the deposited material.