Memory device and method for fabricating the same
AssigneeMacronix International Co., Ltd.
InventorGuan-Ru Lee
Life of this patent
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Abstract
A memory device comprises a patterned multi-layers stacking structure, a semiconductor capping layer, a memory layer and a channel layer. The patterned multi-layers stacking structure is formed on a substrate and has at least one trench used to define a plurality of ridge-shaped stacks comprising at least one conductive strip in the patterned multi-layers stacking structure. The semiconductor capping layer covers on the ridge-shaped stacks. The memory layer covers on sidewalls of the trench. The channel layer covers on the memory layer, the semiconductor capping layer and a bottom of the trench, wherein the channel layer is directly in contact with the semiconductor capping layer.
Claims20
A memory device, comprising:
- a patterned multi-layers stacking structure, formed on a substrate and having at least one trench used to define a plurality of ridge-shaped stacks comprising at least one conductive strip in the patterned multi-layers stacking structure;
- a semiconductor capping layer, directly in contact with and covering the ridge-shaped stacks;
- a memory layer, covering on sidewalls of the trench;
- and
- a channel layer, covering on the memory layer, a side surface and a top surface of the semiconductor capping layer and a bottom of the trench, wherein the channel layer is directly in contact with the semiconductor capping layer.
A method for fabricating a memory device, comprising:
- providing a multi-layers stacking structure on a substrate;
- forming a semiconductor capping layer directly in contact with and covering the multi-layers stacking structure;
- patterning the multi-layers stacking structure and the semiconductor capping layer to form at least one trench to define a plurality of ridge-shaped stacks each of which comprises at least one conductive strip;
- forming memory layer covering on the semiconductor capping layer as well as covering on sidewalls and a bottom of the trench;
- removing portions of the memory layer disposed on the semiconductor capping layer and the bottom of the trench;
- and
- forming a channel layer covering on the memory layer, a side surface and a top surface of the semiconductor capping layer and the bottom of the trench, whereby the channel layer is directly in contact with the semiconductor capping layer.
Dependencies are inferred from the claim text.