Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system
AssigneeEntegris, Inc.
InventorsRobert Kaim, Joseph D. Sweeney, Anthony M. Avila, Richard S. Ray
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Abstract
An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement.
Claims21
A packaged gas mixture for use in ion implantation, comprising a gas mixture including boron trifluoride gas, xenon, and hydrogen, and a gas storage and dispensing vessel storing the gas mixture, wherein the boron trifluoride is isotopically enriched above natural abundance level of a boron isotope, and wherein the hydrogen gas in present in an amount that is effective in the gas mixture to improve the lifetime and performance of an ion source, as compared to a corresponding gas mixture lacking the hydrogen gas.
Dependencies are inferred from the claim text.