Methods of manufacturing semiconductor devices

A method of manufacturing a semiconductor device, the method comprising:

• forming a plurality of sacrificial layer line patterns on an etch target, each of the sacrificial layer patterns extending longitudinally in a first direction;
• conformally forming a mask layer on the sacrificial layer pattern and the etch target;
• forming a filling layer in spaces between neighboring portions of the mask layer;
• etching upper portions of the mask layer to expose a top surface of the sacrificial layer pattern to form a plurality of mask patterns, each of the mask patterns including a first linear section, a second linear section and a connecting portion connecting the first and second linear sections to each other at bottom parts of the first and second linear portions;
• removing the sacrificial layer line patterns and the filling layer;
• and
• anisotropically etching the connecting portion of each of the mask patterns and the etch target to form a plurality of target layer patterns.

A method of manufacturing a semiconductor device, comprising:

• forming a sacrificial layer pattern structure on an etch target;
• selectively etching the sacrificial layer pattern structure to form holes extending therethrough and exposing the etch target;
• and
• subsequently etching the etch target using the sacrificial layer pattern structure as an etch mask to thereby form holes in the etch target corresponding to the holes extending through the sacrificial layer pattern structure,
• wherein the forming of the sacrificial layer pattern structure comprises:
• forming a first sacrificial layer on the etch target,
• forming a first mask layer on the sacrificial layer,
• forming a plurality of sacrificial layer line patterns on the first mask layer, each of the sacrificial layer line patterns extending longitudinally in a first direction so as to have sidewall surfaces facing in a second direction substantially perpendicular to the first direction,
• forming preliminary mask patterns on the sidewall surfaces of the sacrificial layer patterns, respectively,
• forming a filling layer in spaces between the preliminary mask patterns,
• etching upper portions of the preliminary mask patterns to form a plurality of first mask patterns, each of the first mask patterns being symmetric with respect to a plane passing a center point of each of the mask patterns in the second direction and extending in the first direction,
• removing the sacrificial layer line patterns and the filling layer, and
• etching the first mask layer using the first mask patterns as an etch mask to form a first mask having sections extending longitudinally in the first direction and spaced apart in the second direction, and etching the first sacrificial layer using the first mask to form first sacrificial layer patterns extending longitudinally in the first direction.