Group III nitride substrates and their fabrication method
AssigneeSixPoint Materials, Inc.
InventorTadao Hashimoto
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Abstract
Group III nitride substrate having a first side of nonpolar or semipolar plane and a second side has more than one stripe of metal buried, wherein the stripes are perpendicular to group III nitride's c-axis. More than 90% of stacking faults exist over metal stripes. Second side may expose a nonpolar or semipolar plane. Also disclosed is a group III nitride substrate having a first side of nonpolar or semipolar plane and a second side with exposed nonpolar or semipolar plane. The substrate contains bundles of stacking faults with spacing larger than 1 mm. The invention also provides methods of fabricating the group III nitride substrates above.
Claims13
A group III nitride substrate comprising,
- (a) a first side exposing nonpolar or semipolar plane of group III nitride;
- (b) a second side opposite to the first side and containing a plurality of metal stripes buried in the group III nitride of the second side, and wherein the direction of the plurality of stripes is perpendicular to c-axis of the group III nitride;
- and
- (c) wherein more than 90% of stacking faults of group III nitride exist over the regions of stripes of metal.
Dependencies are inferred from the claim text.