Semiconductor manufacturing method
AssigneeToshiba Memory Corporation
InventorsShinya Okuda, Kei Watanabe, Hidekazu Hayashi
Life of this patent
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Abstract
A semiconductor manufacturing method in accordance with an embodiment includes feeding a first gas, which contains a component of a first film, to a reaction chamber, and forming a first film over a semiconductor substrate, which is accommodated in the reaction chamber, through plasma CVD. The semiconductor manufacturing method includes feeding a second gas to the reaction chamber after forming the first film, allowing the first gas in the reaction chamber to react on the second gas, and forming a second film, which has a composition different from that of the first film, over the surface of the first film. The semiconductor manufacturing method includes selectively removing the second film.
Claims14
A semiconductor manufacturing method comprising:
- feeding a first gas to a reaction chamber, the first gas comprises a component of a first film;
- feeding a high-frequency electric power to the reaction chamber for forming a first film over a semiconductor substrate provided in the reaction chamber using plasma CVD method, the reaction chamber being deaerated;
- feeding a second gas to the deaerated reaction chamber for forming a second film over the surface of the first film after forming the first film without suspending the feeding of the high-frequency electric power, allowing the first gas in the reaction chamber to react on the second gas, the second film comprises a composition different from that of the first film;
- suspending the feeding of the high-frequency electric power for stopping the forming of the second film;
- and
- selectively removing the second film.
Dependencies are inferred from the claim text.