Substrate processing method and substrate processing apparatus
AssigneeHitachi Kokusai Electric Inc.
InventorsTatsushi Ueda, Tadashi Terasaki, Unryu Ogawa, Akito Hirano
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Abstract
A manufacturing method of a semiconductor device includes generating hydrogen radicals by plasma excitation of hydrogen gas and exposing a surface of a substrate on which silicon and metal are exposed to a reducing atmosphere created with the hydrogen radicals, and generating hydrogen radicals and hydroxyl radicals by plasma excitation of a mixed gas of hydrogen gas and oxygen-containing gas and oxidizing the silicon exposed on the surface of the substrate by exposing the surface of the substrate to the hydrogen radicals and hydroxyl radicals to obtain the substrate on which the metal and oxidized silicon are formed.
Claims13
A manufacturing method of a semiconductor device comprising:
- (a) generating hydrogen radicals by plasma excitation of hydrogen gas without oxygen gas and without an oxygen-containing gas and exposing a surface of a substrate on which a silicon surface and a metal surface are exposed to a reducing atmosphere created with the hydrogen radicals;
- and
- (b) generating hydrogen radicals and hydroxyl radicals by plasma excitation of a mixed gas of hydrogen gas and oxygen gas or oxygen-containing gas and oxidizing the silicon surface exposed on the surface of the substrate by exposing the surface of the substrate to the hydrogen radicals and the hydroxyl radicals to obtain the substrate on which the metal surface and oxidized silicon surface are formed,
- wherein the creation of the reducing atmosphere performed in (a) is maintained in (b) in a space where the substrate is exposed.
A manufacturing method of a semiconductor device comprising:
- (a) generating hydrogen radicals by plasma excitation of hydrogen gas supplied in a processing chamber without oxygen gas and without an oxygen-containing gas and exposing a surface of a substrate on which a silicon surface and a metal surface are exposed to a reducing atmosphere created with the hydrogen radicals;
- and
- (b) generating hydrogen radicals and hydroxyl radicals by plasma excitation of a mixed gas of hydrogen gas and oxygen gas or oxygen-containing gas supplied in the process chamber and oxidizing the silicon surface exposed on the surface of the substrate by exposing the surface of the substrate to the hydrogen radicals and hydroxyl radicals to obtain the substrate on which the metal surface and oxidized silicon surface are formed,
- wherein (a) and (b) are sequentially performed without interruption, and the surface of the substrate is continuously exposed to the hydrogen radicals throughout (a) and (b).
A manufacturing method of a semiconductor device comprising:
- (a) generating hydrogen radicals by plasma discharge of hydrogen gas in a processing chamber without oxygen gas and without an oxygen-containing gas and exposing a surface of a substrate on which a silicon surface and a metal surface are exposed to a reducing atmosphere created with the hydrogen radicals;
- and
- (b) generating hydrogen radicals and hydroxyl radicals by plasma discharge of a mixed gas of hydrogen gas and oxygen gas or oxygen-containing gas in the process chamber and oxidizing the silicon surface exposed on the surface of the substrate by exposing the surface of the substrate to the hydrogen radicals and hydroxyl radicals to obtain the substrate on which the metal surface and oxidized silicon surface are formed,
- wherein (a) and (b) are sequentially performed without interruption and the surface of the substrate is continuously exposed to the hydrogen radicals throughout (a) and (b).
Dependencies are inferred from the claim text.