RF pulse reflection reduction for processing substrates
AssigneeApplied Materials, Inc.
InventorKatsumasa Kawasaki
Life of this patent
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AssigneeApplied Materials, Inc.
InventorKatsumasa Kawasaki
Estimating the term…
Methods and systems for RF pulse reflection reduction in process chambers are provided herein. In some embodiments, a method includes (a) providing a plurality of pulsed RF power waveforms from a plurality of RF generators during a first time period, (b) determining an initial reflected power profile for each of the plurality of pulsed RF power waveforms, (c) for each of the plurality of pulsed RF power waveforms, determining a highest level of reflected power, and controlling at least one of a match network or the RF generator to reduce the highest level of reflected power, (d) determining an adjusted reflected power profile for each of the plurality of pulsed RF power waveforms and (e) repeating (c) and (d) until the adjusted reflected power profile for each of the plurality of pulsed RF power waveforms is within a threshold tuning range.
A method comprising:
A non-transitory computer readable medium having instructions stored thereon that, when executed, cause a method of RF pulse reflection reduction in a process chamber to be performed, the method comprising:
A substrate processing system comprising:
Dependencies are inferred from the claim text.