Back to results
US 9,754,765 B2Granted
Electrodes for etch
AssigneeApplied Materials, Inc.
InventorsBanqiu Wu, Saravjeet Singh, Amitabh Sabharwal, Ajay Kumar
Life of this patent
Estimating the term…
Abstract
An electrode having a first portion and a second portion is formed over a substrate to couple to a bias RF power. The first portion is configured to compensate for an electric field at the second portion to even out a distribution of an etching strength over a workpiece placed over the electrode.
Claims12
An apparatus to etch a workpiece comprising:
- a supporting substrate;
- and
- a first electrode layer comprising a first portion and a second portion over the supporting substrate to couple to a bias RF power, wherein the first portion is configured to compensate for an electric field at the second portion to even out a distribution of an etching strength over the workpiece;
- a first laminate layer underneath the first electrode layer;
- a second laminate layer over the first electrode layer;
- and
- a second electrode layer over the second laminate layer.
4 more elements
A system to manufacture an electronic device, comprising:
- a chamber;
- a first electrode coupled to the chamber to provide a bias RF power to a workpiece, the first electrode having a first portion and a second portion,
- wherein the first portion is configured to compensate for an electric field at the second portion to even out a distribution of an etching strength over the workpiece;
- a first laminate layer underneath the first electrode;
- a second laminate layer over the first electrode;
- a second electrode over the second laminate layer;
- and a processor coupled to control the bias RF power supplied to the electrode.
4 more elements
Dependencies are inferred from the claim text.