Back to results
US 9,754,761 B2Granted
High-speed hotspot or defect imaging with a charged particle beam system
AssigneeKLA-Tencor Corporation
InventorsHong Xiao, Christopher Maher
Life of this patent
Estimating the term…
Abstract
An inspection tool includes a controller that is configured to generate a scan pattern for an electron beam to image areas of interest on the wafer. The scan pattern minimizes dwell time of the electron beam on the surface of the wafer between the areas of interest. At least one stage speed and at least one raster pattern can be selected based on the areas of interest. The controller sends instructions to electron beam optics to direct the electron beam at the areas of interest on the surface of the wafer using the scan pattern.
Claims18
An inspection tool comprising:
- an electron beam generator unit configured to generate an electron beam;
- a stage configured to clamp a wafer;
- at least one actuator configured to move the stage;
- electron beam optics configured to direct the electron beam at a surface of the wafer;
- a detector configured to detect electrons from the electron beam;
- and
- a controller in electronic communication with at least the electron beam optics and the actuator, wherein the controller is configured to:
- receive instructions including at least two areas of interest in a swath of the wafer to be scanned by the electron beam;
- generate a scan pattern for the electron beam to image the areas of interest on the wafer, wherein the scan pattern minimizes dwell time of the electron beam on the surface of the wafer between the areas of interest, and wherein the controller selects at least one stage speed and at least one raster pattern based on the areas of interest in the swath;
- and
- send instructions to the electron beam optics to direct the electron beam at the areas on the surface of the wafer using the scan pattern.
8 more elements
A method comprising:
- generating a scan pattern for an electron beam to image at least two areas of interest in a swath of a wafer, wherein the scan pattern minimizes dwell time of the electron beam on the surface of the wafer between the areas of interest, and wherein at least one stage speed and at least one raster pattern are selected for the scan pattern based on the areas of interest in the swath;
- and
- directing the electron beam over the surface of the wafer using the scan pattern.
Dependencies are inferred from the claim text.