One-time programmable memory devices using FinFET technology
AssigneeAttopsemi Technology Co., LTD
InventorShine C. Chung
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AssigneeAttopsemi Technology Co., LTD
InventorShine C. Chung
Estimating the term…
An OTP (One-Time Programmable) memory including OTP memory cells that utilize OTP elements fabricated in CMOS FinFET processes. The OTP memory cell can also include at least one selector built upon at least one fin structure that has at least one CMOS gate to divide the fin structure into at least a first and a second active region. The selector can be implemented as a MOS device, dummy-gate diode, or Schottky diode as selector such as by using different types of source/drain implants. The OTP element that can be implemented as polysilicon, silicided polysilicon, CMOS metal gate, any layers of metal as interconnect, or active region. In one embodiment, the OTP element can be a fin structure and can be built upon the same fin structure as the at least one of the selector. By using different source/drain implant schemes on the two active regions, the selector can be turned on as MOS device, MOS device and/or diode, dummy-gate diode, or Schottky diode.
A One-Time Programmable (OTP) memory, comprising:
An electronic system, comprising:
An electronic system as recited 11, wherein at least a portion of the OTP element is built upon a fin structure.
An electronic system as recited 11, wherein at least a portion of the OTP element is built upon the same fin structure as the selector.
A method for operating an OTP memory, the method comprises:
Dependencies are inferred from the claim text.