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US 9,754,666 B2Granted
Resistive ratio-based memory cell
AssigneeHewlett Packard Enterprise Development LP
InventorsBrent E. Buchanan, Martin Foltin, Jeffrey A. Lucas, Clinton H. Parker
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Abstract
An apparatus includes a first resistive storage element and a second resistive storage element. The first and second resistive storage elements are coupled to column lines to of a crosspoint array to form a memory cell; and a ratio of resistances of the first and second resistive storage elements indicates a stored value for the memory cell.
Claims13
An apparatus comprising:
- a plurality of column lines;
- a plurality of row lines;
- a plurality of sense amplifiers;
- and
- a plurality of memory cells;
- wherein:
- a given memory cell of the plurality of memory cells comprises a first resistive storage element coupled to a first column line of the plurality of column lines and a second resistive storage element coupled to a second column line of the plurality of column lines;
- a given sense amplifier of the plurality of sense amplifiers is coupled to the first and second column lines to provide an indication of a value stored by the given memory cell when the given memory cell is selected, and
- the given sense amplifier includes a first current mirror, a second current mirror, and a third current mirror, where the first current mirror is to mirror a first current from the first column line to the third current mirror and the second current mirror is to mirror a second current of the second column line to the third current mirror such that a voltage of an output node is pulled low or high based on which one of the first and second currents is larger.
6 more elements
An apparatus comprising:
- a first resistive storage element with a first end connected to a row line and a second end connected to a first column line;
- a second resistive storage element with a first end connected to the row line and a second end connected to a second column line, the first and second resistive storage element forming a memory cell;
- and
- a sense amplifier comprising a first current mirror, a second current mirror, and a third current mirror, where the first current mirror is to mirror a first current from the first column line to the third current mirror and the second current mirror is to mirror a second current of the second column line to the third current mirror such that a voltage of an output node is pulled low or high based on which one of the first and second currents is larger.
1 more element
Dependencies are inferred from the claim text.