Back to results
US 9,754,651 B2Granted
Modular magnetoresistive memory
AssigneeSeagate Technology LLC
InventorsOleg N. Mryasov, Thomas F. Ambrose, Werner Scholz
Life of this patent
Estimating the term…
Abstract
A magnetoresistive memory element is provided with a read module having a first pinned layer with a magnetoresistance that is readable by a read current received from an external circuit. A write module has a nanocontact that receives a write current from the external circuit and, in turn, imparts a spin torque to a free layer that functions as a shared storage layer for both the read module and the write module.
Claims9
A magnetoresistive memory apparatus, comprising:
- a tunneling magnetoresistive (TMR) stack having a first pinned layer and a barrier layer between the pinned layer and a shared storage layer, the pinned layer and barrier layer together constructed for high resistance to optimize read sensitivity;
- and
- a giant magnetoresistive (GMR) stack having a second pinned layer and a spacer layer, one of the pinned layers having a magnetization that is perpendicular to the shared storage layer and the pinned layers having magnetizations that are perpendicular with respect to each other, and constructed for a comparatively lower critical current response than the TMR construction to optimize switching efficiency, wherein the TMR stack resistance is comparatively higher than the write module construction.
Dependencies are inferred from the claim text.