Erasing method and memory device using the same
AssigneeMacronix International Co., Ltd.
InventorsYu-Ming Chang, Hsiang-Pang Li, Hsin-Yu Chang, Chien-Chung Ho, Yuan-Hao Chang
Life of this patent
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Abstract
An erasing method and a memory device are provided. The memory device includes a plurality of memory blocks. Each of the memory blocks has n sub-blocks. The erasing method includes the following steps. A first erase region is selected from a first memory block of the memory blocks, and the first erase region includes at least one sub-block. A sub-block erase operation is performed on the first erase region of the first memory block.
Claims18
An erasing method for a memory device comprising a plurality of memory blocks, wherein each of the memory blocks has n sub-blocks, wherein n is a positive integer, and the erasing method comprises:
- selecting a first erase region from a first memory block of the memory blocks, wherein the first erase region comprises at least one sub-block;
- and
- performing a sub-block erase operation on the first erase region of the first memory block;
- selecting a second erase region from the memory blocks, wherein the second erase region comprises at least one sub-block, and the second erase region is not overlapping the first erase region;
- and
- performing the sub-block erase operation on the second erase region;
- wherein each of the sub-blocks has a plurality of pages, each of the pages is a valid page or an invalid page.
A memory device, comprising:
- a memory array comprising a plurality of memory blocks, wherein each of the memory blocks has n sub-blocks, and n is a positive integer;
- and
- an erase controller electrically connected to the memory array, wherein the erase controller is configured to:
- select a first erase region from a first memory block of the memory blocks, wherein the first erase region comprises at least one sub-block;
- perform a sub-block erase operation on the first erase region of the first memory block,
- wherein the erase controller is further configured to:
- select a second erase region from the memory blocks, wherein the second erase region comprises at least one sub-block, and the second erase region is not overlapping the first erase region;
- and
- perform the sub-block erase operation on the second erase region;
- wherein each of the sub-blocks has a plurality of pages, each of the pages is a valid page or an invalid page.
Dependencies are inferred from the claim text.