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US 9,754,632 B2Granted
Semiconductor memory system
AssigneeToshiba Memory Corporation
InventorsHayato Masubuchi, Naoki Kimura, Manabu Matsumoto, Toyota Morimoto
Life of this patent
Estimating the term…
Abstract
According to one embodiment, a semiconductor memory system includes a substrate, a plurality of elements and an adhesive portion. The substrate has a multilayer structure in which wiring patterns are formed, and has a substantially rectangle shape in a planar view. The elements are provided and arranged along the long-side direction of a surface layer side of the substrate. The adhesive portion is filled in a gap between the elements and in a gap between the elements and the substrate, where surfaces of the elements are exposed.
Claims22
A semiconductor device comprising:
- a substrate;
- and
- a plurality of nonvolatile semiconductor memories mounted on the substrate, wherein the substrate includes:
- a first main surface and a second main surface, the second main surface facing a direction opposite to a direction in which the first main surface is facing;
- a first wiring layer provided on the first main surface, the nonvolatile semiconductor memories being mounted on the first wiring layer;
- a second wiring layer provided on the second main surface;
- a plurality of wiring layers disposed as an inner layer;
- and
- a plurality of insulating layers provided between the first wiring layer, the plurality of wiring layers, and the second wiring layer, wherein
- an average value of a wiring density of the wiring layers and the second wiring layer that are disposed on the second main surface side with respect to a center line of a layer structure of the substrate is equal to or greater than an average value of a wiring density of the wiring layers and the first wiring layer that are disposed on the first main surface side with respect to the center line of the layer structure of the substrate, and a difference between these average values is 7.5% or less, and
- a wiring density of at least one of the plurality of wiring layers is 80% or greater.
8 more elements
A semiconductor device comprising:
- a substrate;
- and
- a plurality of nonvolatile semiconductor memories mounted on the substrate, wherein the substrate includes:
- a first main surface and a second main surface, the second main surface facing a direction opposite to a direction in which the first main surface is facing;
- a first wiring layer provided on the first main surface, the nonvolatile semiconductor memories being mounted on the first wiring layer;
- a second wiring layer provided on the second main surface;
- a plurality of wiring layers disposed as an inner layer;
- and
- a plurality of insulating layers provided between the first wiring layer, the plurality of wiring layers, and the second wiring layer, wherein
- an average value of a wiring density of the plurality of wiring layers and the second wiring layer, which are disposed on a second main surface side with respect to a center line of a layer structure of the substrate, is equal to or greater than an average value of a wiring density of the plurality of wiring layers and the first wiring layer, which are disposed on a first main surface side with respect to the center line of the layer structure of the substrate,
- a difference between the average value of the wiring density of the plurality of wiring layers and the second wiring layer, which are disposed on the second main surface side with respect to the center line of the layer structure of the substrate, and the average value of the wiring density of the plurality of wiring layers and the first wiring layer, which are disposed on the first main surface side with respect to the center line of the layer structure of the substrate, is 7.5% or less, and
- a wiring density of a fifth wiring layer is 80% or greater, the fifth wiring layer being among the wiring layers disposed as the inner layer, the fifth wiring layer facing the second wiring layer, with an insulating layer provided therebetween.
9 more elements
Dependencies are inferred from the claim text.