Device for assisting with setting of manufacturing conditions for silica glass crucible, device for assisting with setting of manufacturing conditions for mold for manufacturing silica glass crucible, device for assisting with condition setting for pulling up monocrystalline silicon using silica glass crucible

An apparatus for supporting setting of a manufacturing condition of a mold for manufacturing a vitreous silica crucible, the apparatus comprising;

• a crucible design data acquisition unit configured to acquire design data of a three-dimensional shape of the vitreous silica crucible of any model, production lot, or serial number;
• a mold design data setting unit configured to set design data of a three-dimensional shape of the mold on a basis of the crucible design data;
• a simulation unit configured to obtain simulation data of the three-dimensional shape of the vitreous silica crucible by use of a calculation engine capable of performing one or more kinds of:
• heat transfer calculation, fluid calculation, and structure calculation, the vitreous silica crucible being obtained by arc-fusing silica powder on the mold having the three-dimensional shape according to the mold design data;
• a property parameter setting unit configured to set a property parameter used by the calculation engine;
• a crucible measurement data acquisition unit configured to acquire crucible measurement data of the three-dimensional shape of the vitreous silica crucible obtained by arc-fusing silica powder on the mold manufactured based on the mold design data;
• a pattern matching computing unit to compare two types of data selected from the crucible design data, the simulation data, and the crucible measurement data, and to judge a degree of matching between three-dimensional shapes of the selected two types of data;
• and
• an output unit configured to output the simulation data or the mold design data,
• wherein the property parameter setting unit comprises an improved property parameter setting unit configured to, if the degree of matching between the three-dimensional shape of the simulation data obtained based on an initial property parameter and the three-dimensional shape of the crucible measurement data falls below a predetermined level, set an improved property parameter by changing the property parameter until a degree of matching between the three-dimensional shape of the simulation data obtained based on the changed property parameter and the three-dimensional shape of the crucible measurement data becomes higher than or equal to the predetermined level, and
• wherein the mold design data setting unit comprises an improved mold design data setting unit configured to set an improved mold design data by changing the mold design data until the three-dimensional shape of the simulation data obtained using the changed mold design data matches the three-dimensional shape of the crucible design data to a degree higher than or equal to a predetermined level.

An apparatus for supporting setting of a condition under which a silicon single crystal is pulled by use of a vitreous silica crucible, the apparatus comprising:

• a crucible identifying information storing unit configured to store crucible identifying information by which the vitreous silica crucible can be identified, the crucible identifying information being inputted by a user;
• a measurement data acquisition unit configured to acquire measurement data of a three-dimensional shape of the vitreous silica crucible identified by the crucible identifying information;
• a simulation unit configured to, assuming that the silicon single crystal is pulled by use of the vitreous silica crucible having the three-dimensional shape according to the measurement data, obtain simulation data of an incidence of a crystal defect by use of a calculation engine capable of performing one or more kinds of calculation selected from the group consisting of heat transfer calculation, fluid calculation, and structure calculation;
• a pulling condition setting unit configured to set pulling conditions used by the simulation unit, which pulling conditions comprising heating temperature, pulling speed, and rotation speed and to, if the simulation data of the incidence of the crystal defect obtained based on initial pulling conditions exceeds a predetermined level, set an improved pulling conditions by changing the pulling conditions until an incidence of the a crystal defect obtained based on the changed pulling conditions becomes equal to or lower than the predetermined level;
• and
• an output unit configured to output the changed pulling conditions.