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US 9,753,849 B2Granted
Methods for manufacturing and operating a memory device and a method for operating a system having the same
AssigneeSamsung Electronics Co., Ltd.
InventorsKui Yon Mun, Young Jin Cho, Young Kwang Yoo
Life of this patent
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Abstract
A method for manufacturing a memory device includes detecting, with a tester, whether memory cells included in a memory device are defective, and programming, with the tester, start addresses of defect-free memory regions for addressing modes of the memory device based on a result of the detection.
Claims16
A method for manufacturing a memory device, comprising:
- detecting, with a tester, whether memory cells included in a memory device are defective;
- and
- programming, with the tester, start addresses of defect-free memory regions for addressing modes in the memory device based on a result of the detection,
- wherein the start addresses are different from each other according to a size of a corresponding one of the defect-free memory regions.
1 more element
A method for operating a memory device, comprising:
- receiving an instruction from a host;
- and
- transferring at least one of start addresses of defect-free memory regions for addressing modes to the host in response to the instruction,
- wherein the start addresses of defect-free memory regions are programmed in the memory device in a mass-production phase, wherein the start addresses are different from each other according to a size of a corresponding one of the defect-free memory regions.
1 more element
A method for operating a memory system which includes a host, a first memory device, and a second memory device, comprising:
- reading, by the host, a first start address of a plurality of start addresses from the first memory device, wherein the plurality of start addresses correspond to defect-free memory regions for addressing modes;
- reading, by the host, a boot loader from the second memory device;
- and
- writing, by the host, the boot loader in a defect-free memory region corresponding to the first start address,
- wherein the addressing modes include a row-bank-column addressing mode and a bank-row-column addressing mode.
2 more elements
Dependencies are inferred from the claim text.