High-priority NAND operations management

A storage device, comprising:

• non-volatile memory, including a plurality of physical non-volatile memory die;
• and
• a storage controller having one or more controller modules configured to:
• receive at the storage device a first command corresponding to a first location in a first die of the plurality of physical non-volatile memory die in the storage device, wherein the first command requests a first memory operation comprising a high-priority operation, the first location having both a first physical address and a first aliased physical address distinct from the first physical address;
• send, in accordance with a determination that the first die is performing a blocking low-priority memory operation, a memory operation command, corresponding to the first memory operation, to the first die using the first aliased physical address;
• wherein:
• the blocking low-priority memory operation was sent to the first die using a second physical address;
• and
• a predefined die-selection portion of the second physical address matches the predefined die-selection portion of the first physical address and does not match the predefined die-selection portion of the first aliased physical address.

A non-transitory computer-readable storage medium, storing one or more programs configured for execution by one or more processors of a storage device, the one or more programs including instructions that when executed by the one or more processors cause the storage device to:

• receive at the storage device a first command corresponding to a first location in a first die of a plurality of physical non-volatile memory die in the storage device, wherein the first command requests a first memory operation comprising a high-priority operation, the first location having both a first physical address and a first aliased physical address distinct from the first physical address;
• send, in accordance with a determination that the first die is performing a blocking low-priority memory operation, a memory operation command, corresponding to the first memory operation, to the first die using the first aliased physical address;
• wherein:
• the blocking low-priority memory operation was sent to the first die using a second physical address;
• and
• a predefined die-selection portion of the second physical address matches the predefined die-selection portion of the first physical address and does not match the predefined die-selection portion of the first aliased physical address.

A storage device, comprising:

• non-volatile memory, including a plurality of physical non-volatile memory die;
• and
• controller means
• for receiving at the storage device a first command corresponding to a first location in a first die of the plurality of physical non-volatile memory die in the storage device, wherein the first command requests a first memory operation comprising a high-priority operation, the first location having both a first physical address and a first aliased physical address distinct from the first physical address;
• and
• for sending, in accordance with a determination that the first die is performing a blocking low-priority memory operation, a memory operation command, corresponding to the first memory operation, to the first die using the first aliased physical address;
• wherein:
• the blocking low-priority memory operation was sent to the first die using a second physical address;
• and
• a predefined die-selection portion of the second physical address matches the predefined die-selection portion of the first physical address and does not match the predefined die-selection portion of the first aliased physical address.