# US 9,753,369 B2 · Polymer-containing developer > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,753,369 B2 - Document ID: US9753369B2 - Status: Granted - Kind: B2 - Application number: 14/007,096 - Filed: 2012-03-19 - Published: 2014-02-06 - Granted: 2017-09-05 - Earliest claimed: 2011-03-24 - Assignees: Nissan Chemical Idustries, Ltd. - Applicants: Rikimaru Sakamoto; Yasushi Sakaida; Bangching Ho - Inventors: Rikimaru Sakamoto; Yasushi Sakaida; Bangching Ho - Web page: https://patentgrep.com/patent/US9753369B2 ## CPC - G03F 7/325: {Non-aqueous compositions} - G03F 7/094: {Multilayer resist systems, e.g. planarising layers} - G03F 7/11: having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} - G03F 7/26: Processing photosensitive materials; Apparatus therefor (G03F7/12 - G03F7/24 take precedence) - H10P 50/00: Etching of wafers, substrates or parts of devices - H10P 76/00: Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography - H10P 76/2042: {using lasers} - H10P 76/4085: {characterised by the processes involved to create the masks} - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract Disclosed is a developer, one that does not cause pattern collapse during the formation process, for the formation of a fine pattern and a method for pattern formation using the developer. A developer used in a lithography process includes a polymer for forming a dry-etching mask and an organic solvent. The polymer is preferably a curable resin different from a curable resin forming a resist film. The developer is preferably used after exposure of the resist film. The organic solvent in the developer is preferably butyl acetate or a mixed solvent of butyl acetate and an alcohol, or 2-pentanone or a mixed solvent of 2-pentanone and an alcohol. Also disclosed is a method for producing a semiconductor device. ## Claims ### Claim 1 A developer used in a lithography process, the developer comprising: a polymer for forming a dry-etching mask; and an organic solvent, wherein the developer is for forming a reverse pattern in the lithography process; and the polymer is a novolac resin, or a polyorganosiloxane obtained by hydrolysis and condensation of at least one hydrolyzable silane selected from silanes having a structure of Formula (1): R1aSi(R2)4−a Formula (1) where: R1 is selected from the group consisting of an alkyl group, an aryl group, an aralkyl group, a halogenated alkyl group, a halogenated aryl group, a halogenated aralkyl group, an alkenyl group, an epoxy group, an acryloyl group, a methacryloyl group, a mercapto group, an alkoxyaryl group, an acyloxyaryl group, an organic group having a cyano group, and a combination thereof; R1 is bonded to the silicon atom through a Si—C bond; R2 is selected from the group consisting of an alkoxy group, an acyloxy group, and a halogen group; and a is an integer in a range of from 0 to 3. ### Claim 2 (depends on 1) The developer according to claim 1, wherein the polymer is a curable resin different from a curable resin forming a resist film. ### Claim 3 (depends on 1) The developer according to claim 1, wherein the developer is used after exposure of a resist film. ### Claim 4 (depends on 1) The developer according to claim 1, wherein the organic solvent in the developer is butyl acetate or a mixed solvent of butyl acetate and an alcohol. ### Claim 5 (depends on 1) The developer according to claim 1, wherein the organic solvent in the developer is 2-pentanone or a mixed solvent of 2-pentanone and an alcohol. ### Claim 6 (depends on 1) The developer according to claim 1, wherein the polymer is present in the developer in a concentration of from 0.5 to 20% by weight. ### Claim 7 (depends on 1) The developer according to claim 1, wherein: a solid content of the developer is present in an amount in a range of from 0.5 to 20.0% by mass; an amount of the polymer in the solid content is 50 to 100% by mass; and the polysiloxane has a weight-average molecular weight in a range of from 500 to 30,000. ### Claim 8 (depends on 1) A method for producing a semiconductor device, the method comprising: (A) applying a resist to a semiconductor substrate to form a resist film and exposing the resist film to light through a predetermined mask, thereby forming an exposed area and an unexposed area of the resist film; (B) bringing a surface of the resist film into contact with the developer claimed in claim 1 to create a resist pattern by dissolving the unexposed area of the resist film in the organic solvent of the developer, and to form a layer of the polymer of the developer in a space created by the resist pattern; and (C) removing the resist pattern by dry etching to form a reverse pattern comprising the polymer of the developer. ### Claim 9 (depends on 8) The method for producing a semiconductor device according to claim 8, wherein the forming of the resist film in (A) is performed by forming a resist underlayer film on the semiconductor substrate and forming the resist film on the resist underlayer film. ### Claim 10 (depends on 8) The method for producing a semiconductor device according to claim 8, wherein the forming of the resist film in (A) is performed by forming an organic underlayer film on the semiconductor substrate, forming a hard mask containing a silicon atom on the organic underlayer film, and forming the resist film on the hard mask. ### Claim 11 (depends on 8) The method for producing a semiconductor device according to claim 8, wherein the forming of the polymer layer in (B) includes applying heat. ### Claim 12 (depends on 8) The method for producing a semiconductor device according to claim 8, wherein, in (C), a dry etching rate ratio of resist/polymer is 1.0 or more. ### Claim 13 A method for producing a semiconductor device, the method comprising: contacting a surface of a resist film formed on a semiconductor substrate with a developer comprising a polymer and an organic solvent to create a resist pattern and to form a layer of the polymer of the developer in a space created by the resist pattern; and removing the resist pattern by dry etching to form a reverse pattern comprising the polymer of the developer; wherein: the resist film has been exposed to light through a predetermined mask to form an exposed area and an unexposed area; and the resist pattern is created by dissolving the unexposed area of the resist film in the organic solvent of the developer. ### Claim 14 (depends on 13) The method according to claim 13, further comprising applying a resist to the semiconductor substrate to form the resist film, and exposing the resist film to light through a predetermined mask to form the exposed area and the unexposed area of the resist film.