# US 9,753,363 B2 · Scanner based optical proximity correction system and method of use

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- Number: US 9,753,363 B2
- Document ID: US9753363B2
- Status: Granted
- Kind: B2
- Application number: 15/041,312
- Filed: 2016-02-11
- Published: 2016-06-09
- Granted: 2017-09-05
- Earliest claimed: 2007-01-18
- Assignees: Nikon Corporation; Nikon Precision Inc.
- Applicants: Nikon Corporation; Nikon Precision Inc.
- Inventors: Jacek Tyminski; Raluca Popescu; Tomoyuki Matsuyama
- Web page: https://patentgrep.com/patent/US9753363B2

## CPC

- G03F 1/36: Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
- G03F 1/68: Preparation processes not covered by groups G03F1/20 - G03F1/50
- G06F 30/00: Computer-aided design [CAD]
- G06F 30/398: Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM] (optical proximity correction [OPC] design processes G03F1/36)
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)
- G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N)

## Abstract

A modeling technique is provided. The modeling technique includes inputting tool parameters into a model and inputting basic model parameters into the model. The technique further includes generating a simulated, corrected reticle design using the tool parameters and the basic model parameters. An image of test patterns is compared against the simulated, corrected reticle design. A determination is made as to whether δ1<ε1, wherein δ1 represents model vs. exposure difference and ε1 represents predetermined criteria. The technique further includes completing the model when δ1<ε1.

## Claims

### Claim 1

A method, comprising:
modifying, by a computer, a simulated corrected reticle design using basic model parameters and tool parameters of a predetermined projection tool;
creating, by the computer, reticle design data which represents a design of layouts to be imaged for a semiconductor device;
comparing a prediction based on the reticle design data to exposure results of a reticle design which is based on the simulated corrected reticle design; and
creating, by the computer, a completed reticle design based on the comparison.

### Claim 2 (depends on 1)

The method of claim 1, further comprising exposing a semiconductor device using a mask set formed from the completed reticle design to form an image of a circuit design on the semiconductor device using the predetermined projection tool.

### Claim 3 (depends on 1)

The method of claim 1, further comprising determining the tool parameters by conducting an optical proximity effect (OPE) sensitivity analysis.

### Claim 4 (depends on 1)

The method of claim 1, wherein the basic model parameters include at least one of: generic test reticle data; illuminator data; numerical aperture data; feature biasing data; and non-printable sub-resolution assist features (SRAF).

### Claim 5 (depends on 1)

The method of claim 1, wherein the predetermined projection tool is a scanner.

### Claim 6 (depends on 1)

The method of claim 1, wherein the predetermined projection tool is a full field stepper.

### Claim 7 (depends on 1)

The method of claim 1, wherein the tool parameters include one or more of: illuminator details; lens signature as defined in terms of Jones Matrix Map representing lens signature; local and global flare data; longitudinal chromatic aberrations; Illuminator spectrum; and transverse and longitudinal synchronization errors.

### Claim 8

A computer program product comprising a computer usable medium having readable program code embodied in the medium, that, when executed by a computer, causes the computer program product to perform the steps of:
modifying a simulated corrected reticle design using basic model parameters and tool parameters of a predetermined projection tool;
creating reticle design data which represents a design of layouts to be imaged for a semiconductor device;
comparing a prediction based on the reticle design data to exposure results of a reticle design which is based on the simulated corrected reticle design;
creating a completed reticle design based on the comparison; and
creating a mask set for use in manufacturing semiconductor devices based on the completed reticle design.

### Claim 9 (depends on 8)

The computer program product of claim 8, wherein the computer usable medium having readable program code embodied in the medium is encrypted.

### Claim 10 (depends on 8)

The computer program product of claim 8, wherein the tool parameters include one or more of the following: (i) illuminator details; (ii) lens signature as defined in terms of Jones Matrix Map representing lens signature; (iii) local and global flare data; (iv) longitudinal chromatic aberrations; (v) Illuminator spectrum; and (vi) transverse and longitudinal synchronization errors.

### Claim 11 (depends on 10)

The computer program product of claim 10, wherein the tool parameters further include at least one of: (i) NA error; (ii) Sigma error; and (iii) thermal aberration.

### Claim 12 (depends on 8)

The computer program product of claim 8, further comprising conducting an optical proximity effect (OPE) sensitivity analysis in order to determine which tool parameters are to be used in the model.

### Claim 13

A system for deploying an application for creating a mask set, comprising:
a computer operable to:
modify a simulated corrected reticle design using basic model parameters and tool parameters of a predetermined projection tool;
create reticle design data which represents a design of layouts to be imaged for a semiconductor device;
compare a prediction based on the reticle design data to exposure results of a reticle design which is based on the simulated corrected reticle design;
create a completed reticle design based on the comparison; and
create the mask set based on the completed reticle design.

### Claim 14

A method, comprising:
modifying, by the computer, a simulated corrected reticle design using basic model parameters and tool parameters of a predetermined projection tool;
creating, by the computer, reticle design data which represents a design of layouts to be imaged for a semiconductor device;
comparing a prediction based on the reticle design data to exposure results of a reticle design which is based on the simulated corrected reticle design; and
creating, by the computer, a completed reticle design based on the comparison,
wherein the tool parameters comprise at least one of:
illuminator details;
lens signature as defined in terms of Jones Matrix Map representing lens signature;
local and global flare data;
longitudinal chromatic aberrations;
Illuminator spectrum; and
transverse and longitudinal synchronization errors.

### Claim 15 (depends on 14)

The method of claim 14, wherein the tool parameters further include at least one of: NA error; Sigma error; and thermal aberration.

### Claim 16 (depends on 14)

The method of claim 14, further comprising exposing the semiconductor device using a mask set, formed from the completed reticle design, to form an image of a circuit design on the semiconductor device using the predetermined projection tool.

### Claim 17 (depends on 14)

The method of claim 14, further comprising determining the tool parameters by conducting an optical proximity effect (OPE) sensitivity analysis.

### Claim 18 (depends on 14)

The method of claim 14, wherein the basic model parameters include at least one of: generic test reticle data; illuminator data; numerical aperture data; feature biasing data; and non-printable sub-resolution assist features (SRAF).

### Claim 19 (depends on 14)

The method of claim 14, wherein the predetermined projection tool is a scanner.

### Claim 20 (depends on 14)

The method of claim 14, wherein the predetermined projection tool is a full field stepper.

### Claim 21 (depends on 14)

The method of claim 14, further comprising determining the tool parameters.

### Claim 22 (depends on 14)

The method of claim 14, wherein the illuminator details comprise information about intensity and polarization content of each location in the illumination pupil.