# US 9,753,342 B2 · Color filter array substrate, display device and manufacturing method of color filter array substrate > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,753,342 B2 - Document ID: US9753342B2 - Status: Granted - Kind: B2 - Application number: 14/550,036 - Filed: 2014-11-21 - Published: 2015-12-17 - Granted: 2017-09-05 - Earliest claimed: 2014-06-17 - Assignees: Boe Technology Group Co., Ltd.; Chengdu Boe Optoelectronics Technology Co., Ltd. - Applicants: Boe Technology Group Co., Ltd.; Chengdu BOE Optoelectronics Technology Co., Ltd. - Inventors: Fujiang Jin; Yi Chen - Web page: https://patentgrep.com/patent/US9753342B2 ## CPC - G02F 1/136209: {Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element} - H10D 30/6729: {characterised by the electrodes} - H10D 86/021: {of multiple TFTs} - H10D 86/451: {characterised by the compositions or shapes of the interlayer dielectrics} - H10D 86/60: wherein the TFTs are in active matrices - G02F 1/133357: {Planarisation layers} - G02F 1/134372: {for fringe field switching [FFS] where the common electrode is not patterned} - G02F 1/136222: {Colour filters incorporated in the active matrix substrate} - G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract The invention discloses a color filter array substrate, a display device, and a manufacturing method of the color filter array substrate. The color filter array substrate comprises a substrate, a thin film transistor array formed on the substrate, and a color filter formed on the thin film transistor array, wherein the color filter array substrate further comprises a black matrix formed on the color filter, and a planarization layer formed on the black matrix. In the invention, position of the black matrix in the color filter array substrate is changed, and the planarization layer is formed on the black matrix, so that the black matrix is isolated from the first and second electrode layers, thus the black matrix is effectively prevented from affecting the electric field between the first and second electrode layers. ## Claims ### Claim 1 A color filter array substrate, comprising a substrate, a thin film transistor array formed on the substrate, and a color filter formed on the thin film transistor array, wherein the color filter array substrate further comprises a black matrix formed on the color filter, and a planarization layer formed on the black matrix, wherein the color filter array substrate further comprises a first electrode layer, a passivation layer and a second electrode layer formed above the planarization layer, and the passivation layer is formed between the first electrode layer and the second electrode layer, wherein the first electrode layer, the passivation layer and the second electrode layer are sequentially formed on the planarization layer, and first electrodes in the first electrode layer are connected to drains of corresponding thin film transistors in the thin film transistor array through via holes which directly pass through both the planarization layer and the color filter, wherein the black matrix is formed on an area of the color filter where the via holes do not pass; wherein a dielectric constant of the planarization layer is between 3.0 and 5.0; and wherein a resistivity of the planarization layer is between 1012Ω·cm and 1014Ω·cm. ### Claim 2 (depends on 1) The color filter array substrate according to claim 1, wherein a thickness of the planarization layer is between 2.5 μm-3.0 μm. ### Claim 3 (depends on 1) The color filter array substrate according to claim 1, wherein a material of the planarization layer is any one or a combination of two or more of polymethyl methacrylate, fluorine-containing polymer, Imide-ring containing polymer, organosilane crosslinked polyethylene and tetramethylsilane polymer. ### Claim 4 (depends on 1) A display device, comprising the color filter array substrate of claim 1. ### Claim 5 (depends on 4) The display device according to claim 4, wherein a thickness of the planarization layer is between 2.5 μm-3.0 μm. ### Claim 6 (depends on 4) The display device according to claim 4, wherein a material of the planarization layer is any one or a combination of two or more of polymethyl methacrylate, fluorine-containing polymer, Imide-ring containing polymer, organosilane crosslinked polyethylene and tetramethylsilane polymer. ### Claim 7 A manufacturing method of a color filter array substrate, comprising steps of: providing a substrate and forming a thin film transistor array on the substrate; forming a color filter on the thin film transistor array; forming a black matrix on the color filter; and forming a planarization layer on the black matrix, wherein a dielectric constant of the planarization layer is between 3.0 and 5.0 and a resistivity of the planarization layer is between 1012Ω·cm and 1014Ω·cm, wherein the manufacturing method of a color filter array substrate further includes a step of: sequentially forming a first electrode layer, a passivation layer and a second electrode layer on the planarization layer, and wherein after the step of forming a planarization layer on the black matrix, and before the step of sequentially forming a first electrode layer, a passivation layer and a second electrode layer on the planarization layer, the manufacturing method of a color filter array substrate further includes a step of: forming via holes, which directly pass through both the color filter and the planarization layer, through dry etching, so that first electrodes in the first electrode layer to be formed subsequently on the planarization layer are connected to drains of corresponding thin film transistors in the thin film transistor array through the via holes, wherein the black matrix is formed on an area of the color filter where the via holes do not pass.