# US 9,753,218 B2 · Semiconductor device with integrated mirror and method of producing a semiconductor device with integrated mirror > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,753,218 B2 - Document ID: US9753218B2 - Status: Granted - Kind: B2 - Application number: 15/101,406 - Filed: 2014-11-17 - Published: 2016-11-17 - Granted: 2017-09-05 - Earliest claimed: 2013-12-03 - Assignees: Ams AG - Applicants: ams AG - Inventors: Jochen Kraft; Joerg Siegert; Ewald Stueckler - Web page: https://patentgrep.com/patent/US9753218B2 ## CPC - G02B 6/122: Basic optical elements, e.g. light-guiding paths - G02B 6/132: by deposition of thin films - G02B 6/4214: {the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device (G02B6/4246 takes precedence)} - G02B 6/12004: {Combinations of two or more optical elements} - G02B 6/136: by etching - G02B 6/43: Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections - G02B 2006/12104: {Mirror; Reflectors or the like} - G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS ## Abstract The semiconductor device comprises a substrate (1) of semiconductor material, a dielectric layer (2) above the substrate, a waveguide (3) arranged in the dielectric layer, and a mirror region (4) arranged on a surface of a mirror support (5) integrated on the substrate. A mirror is thus formed facing the waveguide. The surface of the mirror support and hence the mirror are inclined with respect to the waveguide. ## Claims ### Claim 1 A semiconductor device, comprising: a substrate of semiconductor material; a dielectric layer above the substrate; a waveguide arranged in the dielectric layer; a mirror support arranged level with the waveguide, the mirror support comprising a surface that is inclined with respect to the waveguide; the mirror support being a high-density plasma deposited oxide; and a mirror region being arranged on the surface of the mirror support, the mirror region forming a mirror facing the waveguide and being inclined with respect to the waveguide, wherein the waveguide extends in a plane, and the surface of the mirror support is inclined with respect to the plane by an angle of inclination between 40° and 50°, wherein the mirror region is a filling of an opening of the dielectric layer, and is located between the dielectric layer and the mirror support, wherein the filling comprises a higher index of refraction than the mirror support, wherein the mirror support is a silicon oxide, and wherein the filling is silicon. ### Claim 2 (depends on 1) The semiconductor device of claim 1, wherein the mirror region is a mirror layer arranged conformal with the surface of the mirror support. ### Claim 3 (depends on 2) The semiconductor device of claim 2, wherein the mirror layer is gold, silver, copper, aluminum or TiN. ### Claim 4 (depends on 1) The semiconductor device of claim 1, further comprising: a further surface of the mirror support, the mirror region forming a further mirror on the further surface, the mirror support being arranged between parts of the waveguide facing the mirror and the further mirror, respectively. ### Claim 5 (depends on 4) The semiconductor device of claim 4, wherein the surface and the further surface of the mirror support are planar and form an angle between 80° and 100°. ### Claim 6 A method of producing a semiconductor device, comprising: arranging a waveguide in a dielectric layer on a substrate of semiconductor material; forming an opening in the dielectric layer; forming a mirror support in the opening, the mirror support comprising a surface that is inclined with respect to the waveguide; and arranging a mirror region on the surface of the mirror support, thus forming a mirror, wherein the waveguide extends in a plane, and the surface of the mirror support is inclined with respect to the plane by an angle of inclination between 40° and 50°, wherein the mirror support is formed by a high-density plasma deposition of silicon oxide, and wherein after forming the mirror support, the mirror region is formed by an epitaxial growth of silicon, thus covering the inclined surface of the mirror support and filling the opening. ### Claim 7 (depends on 6) The method according to claim 6, wherein a thinned layer portion of the dielectric layer is left in the opening, and the mirror support is formed on surfaces of the thinned layer portion. ### Claim 8 (depends on 7) The method according to claim 7, wherein a recess is formed in the substrate adjacent to the thinned layer portion of the dielectric layer, and the mirror support is partially arranged within the recess. ### Claim 9 (depends on 6) The method according to claim 6, further comprising: forming a sacrificial layer after forming the mirror support, the sacrificial layer not covering an area provided for the mirror region; forming the mirror region as a mirror layer; applying a reflective layer on the sacrificial layer and on the area provided for the mirror region; and removing the sacrificial layer, the mirror layer thus being formed by a remaining portion of the reflective layer. ### Claim 10 A method of producing a semiconductor device, comprising: arranging a waveguide in a dielectric layer on a substrate of semiconductor material; forming an opening in the dielectric layer; forming a mirror support in the opening, the mirror support comprising a surface that is inclined with respect to the waveguide; and arranging a mirror region on the surface of the mirror support, thus forming a mirror, wherein the waveguide extends in a plane, and the surface of the mirror support is inclined with respect to the plane by an angle of inclination between 40° and 50°, wherein the mirror support is formed by a high-density plasma deposition of silicon oxide, and wherein after forming the mirror support, the mirror region is formed by a deposition of polysilicon on the surface of the mirror support, thus filling the opening. ### Claim 11 (depends on 10) The method according to claim 10, wherein a thinned layer portion of the dielectric layer is left in the opening, and the mirror support is formed on surfaces of the thinned layer portion. ### Claim 12 (depends on 11) The method according to claim 11, wherein a recess is formed in the substrate adjacent to the thinned layer portion of the dielectric layer, and the mirror support is partially arranged within the recess. ### Claim 13 (depends on 10) The method according to claim 10, further comprising: forming a sacrificial layer after forming the mirror support, the sacrificial layer not covering an area provided for the mirror region; forming the mirror region as a mirror layer; applying a reflective layer on the sacrificial layer and on the area provided for the mirror region; and removing the sacrificial layer, the mirror layer thus being formed by a remaining portion of the reflective layer.