# US 9,753,101 B2 · XMR angle sensors > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,753,101 B2 - Document ID: US9753101B2 - Status: Granted - Kind: B2 - Application number: 14/928,306 - Filed: 2015-10-30 - Published: 2016-02-18 - Granted: 2017-09-05 - Earliest claimed: 2007-11-16 - Assignees: Infineon Technologies AG - Applicants: Infineon Technologies AG - Inventors: Juergen Zimmer - Web page: https://patentgrep.com/patent/US9753101B2 ## CPC - G01R 33/096: {anisotropic magnetoresistance sensors} - B82Y 25/00: Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance - G01B 7/30: for measuring angles or tapers; for testing the alignment of axes - G01D 5/145: {influenced by the relative movement between the Hall device and magnetic fields (see G01R33/06)} - G01R 33/0052: {Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips (devices based on galvano-magnetic effect or the like H10N50/85)} - G01R 33/09: Magnetoresistive devices - G01R 33/091: {Constructional adaptation of the sensor to specific applications} - G01R 33/093: {using multilayer structures, e.g. giant magnetoresistance sensors (thin magnetic films H01F10/00)} - G01R 33/098: {comprising tunnel junctions, e.g. tunnel magnetoresistance sensors} - H10N 50/10: Magnetoresistive devices - Y10T 29/49002: Electrical device making - Y10T 29/49117: Conductor or circuit manufacturing - G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES (indicating correct tuning of resonant circuits H03J3/12) - B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES - G01B: MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS - G01D: MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR - Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION ## Abstract Embodiments relate to xMR sensors, sensor elements and structures, and methods. In an embodiment, a sensor element comprises a non-elongated xMR structure; and a plurality of contact regions formed on the xMR structure spaced apart from one another such that a non-homogeneous current direction and current density distribution are induced in the xMR structure when a voltage is applied between the plurality of contact regions. ## Claims ### Claim 1 A sensor element comprising: a plurality of non-elongated xMR structures being serially coupled; and at least a selected one of the plurality of non-elongated xMR structures comprising: a first contract region and a second contact region formed on the xMR structure and spaced apart from one another such that a non-homogeneous current direction and current density distribution are induced in the selected xMR structure when a voltage is applied between the first and second contact regions. ### Claim 2 (depends on 1) The sensor element of claim 1, wherein the first and second contact regions are each proximate an edge of the selected one of the plurality of non-elongated xMR structures. ### Claim 3 (depends on 1) The sensor element of claim 1, wherein a first axis is defined in a direction of a maximum lateral dimension of the selected one of the plurality of non-elongated xMR structures and a second axis is defined substantially perpendicular to the first axis, wherein a ratio of dimensions of the xMR structure along the first and second axes is less than about 1.5. ### Claim 4 (depends on 1) The sensor element of claim 1, wherein the selected one of the plurality of non-elongated xMR structures has equal lateral dimensions. ### Claim 5 (depends on 1) The sensor element of claim 1, wherein the selected one of the plurality of non-elongated xMR structures is rotationally symmetrical. ### Claim 6 (depends on 1) The sensor element of claim 1, wherein the selected one of the plurality of non-elongated xMR structures is of a polygonal shape, and is of rotational symmetry. ### Claim 7 (depends on 1) The sensor element of claim 1, wherein the selected one of the plurality of non-elongated xMR structures has a radius. ### Claim 8 (depends on 7) The sensor element of claim 7, wherein the selected one of the plurality of non-elongated xMR structures is substantially round. ### Claim 9 (depends on 1) The sensor element of claim 1, further comprising at least one highly conductive region disposed adjacent at least one of the plurality of contact regions. ### Claim 10 A sensor element comprising: a non-elongated xMR element; a first contact region formed on the xMR element and coupled to a first terminal; a second contact region formed on the xMR element and coupled to a second terminal and spaced apart from the first contact region along a first contact axis; and a third contact region formed on the xMR element and coupled to the second terminal and spaced apart from the first contact region along a second contact axis rotated ninety degrees with respect to the first contact axis such that two electrically parallel current paths, which are physically orthogonal to one another, are exhibited by the xMR element. ### Claim 11 (depends on 10) The sensor element of claim 10, wherein the first contact region is disposed in the approximate center of the xMR element and the second and third contact regions are disposed proximate an edge of the xMR element, the second and third contact regions spaced apart from one another. ### Claim 12 A method comprising: forming an xMR sensor element; forming: a first contact region on the xMR element and coupled to a first terminal; a second contact region on the xMR element and coupled to a second terminal and spaced apart from the first contact region along a first contact axis; and a third contact region on the xMR element and coupled to the second terminal and spaced apart from the first contact region along a second contact axis rotated ninety degrees with respect to the first contact axis such that two electrically parallel current paths, which are physically orthogonal to one another, are exhibited by the xMR element; and causing a current to flow in the xMR sensor element with a locally non-homogenous current direction and current density distribution.