# US 9,753,100 B2 · Magnetic sensor

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- Number: US 9,753,100 B2
- Document ID: US9753100B2
- Status: Granted
- Kind: B2
- Application number: 15/113,915
- Filed: 2015-02-23
- Published: 2016-11-24
- Granted: 2017-09-05
- Earliest claimed: 2014-02-26
- Assignees: Denso Corporation; Tohoku University
- Applicants: Denso Corporation; Tohoku University
- Inventors: Toshifumi Yano; Kenichi Ao; Takamoto Furuichi; Yasuo Ando; Mikihiko Oogane; Takafumi Nakano
- Web page: https://patentgrep.com/patent/US9753100B2

## CPC

- G01R 33/09: Magnetoresistive devices
- H10N 50/10: Magnetoresistive devices
- H10N 50/80: Constructional details
- H10N 50/85: Materials of the active region
- G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES (indicating correct tuning of resonant circuits H03J3/12)
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

## Abstract

A magnetic sensor includes a magnetization fixed layer, a magnetic field detecting layer, and an intermediate layer. The magnetization fixed layer is formed into a thin-film shape, and a magnetization direction of the magnetization fixed layer is fixed in a direction parallel to an in-plane direction. A magnetization direction of the magnetic field detecting layer changes depending on an external magnetic field. The intermediate layer is disposed between the magnetization fixed layer and the magnetic field detecting layer, and a resistance value of the intermediate layer changes depending on an angle between the magnetization direction of the magnetization fixed layer and the magnetization direction of the magnetic field detecting layer. A magnetization amount per unit area of the magnetic field detecting layer is less than 0.2 [memu/cm2].

## Claims

### Claim 1

A magnetic sensor comprising:
a magnetization fixed layer formed into a thin-film shape and having a magnetization direction fixed to a direction parallel to an in-plane direction;
a magnetic field detecting layer having a magnetization direction that changes depending on an external magnetic field; and
an intermediate layer disposed between the magnetization fixed layer and the magnetic field detecting layer and having a resistance value that changes depending on an angle between the magnetization direction of the magnetization fixed layer and the magnetization direction of the magnetic field detecting layer, wherein
a magnetization amount per unit area of the magnetic field detecting layer is less than 0.2 [memu/cm2].

### Claim 2 (depends on 1)

The magnetic sensor according to claim 1, wherein
the magnetic field detecting layer includes at least one or more elements among Co, Fe, and Ni.

### Claim 3 (depends on 2)

The magnetic sensor according to claim 2, wherein
the magnetic field detecting layer includes B.

### Claim 4 (depends on 1)

The magnetic sensor according to claim 1, wherein
the magnetic field detecting layer is a CoFeB film that is made by forming an alloy including Co, Fe, and B into a film shape.

### Claim 5 (depends on 1)

The magnetic sensor according to claim 1, wherein
the magnetization amount per unit area of the magnetic field detecting layer is configured to be less than 0.2 memu/cm2 to detect an external magnetic field in a detected magnetic field range of 300 mT or more.

### Claim 6 (depends on 1)

The magnetic sensor according to claim 1, wherein
the magnetization amount per unit area of the magnetic field detecting layer is configured to be less than 0.2 memu/cm2 to detect an external magnetic field in a detected magnetic field range of 300 mT or more without depending on a material or a crystal state of the magnetic field detecting layer, the insulating layer, or the magnetization fixed layer.

### Claim 7 (depends on 1)

The magnetic sensor according to claim 1, wherein
the magnetic field detecting layer has a thickness of 1.5 nm or less.