# US 9,753,001 B1 · Polymer nanofiber based reversible nano-switch/sensor diode (nanoSSSD) device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,753,001 B1 - Document ID: US9753001B1 - Status: Granted - Kind: B1 - Application number: 14/672,673 - Filed: 2015-03-30 - Granted: 2017-09-05 - Earliest claimed: 2011-09-23 - Assignees: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration - Applicants: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration - Inventors: Felix A. Miranda; Onoufrios Theofylaktos; Nicholas Pinto; Carl H. Mueller; Javier Santos-Perez; Michael A. Meador - Web page: https://patentgrep.com/patent/US9753001B1 ## CPC - G01N 27/129: {Diode type sensors, e.g. gas sensitive Schottky diodes (capacitor type sensors G01N27/227; field-effect transistor type sensors G01N27/414)} - H10D 8/051: {of Schottky diodes} - H10D 8/60: Schottky-barrier diodes - H10D 62/8303: {Diamond} - H10D 62/882: {Graphene} - H10K 10/20: Organic diodes - H10K 10/23: Schottky diodes - H10K 30/50: Photovoltaic [PV] devices - Y02E 10/549: Organic PV cells - G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q) - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION ## Abstract A nanostructure device is provided and performs dual functions as a nano-switching/sensing device. The nanostructure device includes a doped semiconducting substrate, an insulating layer disposed on the doped semiconducting substrate, an electrode formed on the insulating layer, and at least one polymer nanofiber deposited on the electrode. The at least one polymer nanofiber provides an electrical connection between the electrode and the substrate and is the electroactive element in the device. ## Claims ### Claim 1 A nanostructure device comprising: a doped semiconducting substrate; an insulating layer disposed on the doped semiconducting substrate; an electrode formed on the insulating layer; and at least one polymer nanofiber deposited on the electrode and providing an electrical connection between the electrode and the substrate, wherein the nanostructure device is adapted to perform dual functions as a nano-switching/sensing device. ### Claim 2 (depends on 1) The nanostructure device of claim 1, wherein the at least one polymer nanofiber deposited on a top surface of the electrode and extends over an edge of the electrode and contacts the doped substrate to thereby form a Schottky or a p-n junction diode. ### Claim 3 (depends on 2) The nanostructure device of claim 2, wherein when the dual function nano-switching/sensing device is exposed to a volatile gaseous species, the at least one polymer nanofiber adsorbs at least one molecule of the volatile gaseous species thereby altering an operation of the dual function nano-switching/sensing device to allow the nano-switching/sensing device to detect the presence of the volatile gaseous species. ### Claim 4 (depends on 3) The nanostructure device of claim 3, wherein when nano-switching/sensing device is removed from the volatile gaseous species, the at least one molecule of the volatile gaseous species is desorbed from the at least one polymer nanofiber and the nano-switching/sensing device returns to a normal mode of operation to thereby allow the nano-switching/sensing device to detect the absence of the volatile gaseous species. ### Claim 5 (depends on 3) The nanostructure device of claim 3, wherein when the dual function nano-switching/sensing device is exposed to ultra-violet irradiation, the at least one polymer nanofiber adsorbs at least one photon thereby altering an operation of the dual function nano-switching/sensing device to allow the nano-switching/sensing device to detect the presence of the radiation. ### Claim 6 (depends on 5) The nanostructure device of claim 5, wherein when nano-switching/sensing device is removed from the ultra-violet irradiation, the at least one photon of the radiation is emitted from the at least one polymer nanofiber and the nano-switching/sensing device returns to a normal mode of operation to thereby allow the nano-switching/sensing device to detect the absence of the radiation. ### Claim 7 (depends on 1) The nanostructure device of claim 1, wherein the doped substrate is a silicon substrate doped with an n-type doping agent and has a silicon resistivity in the range of 1-10 ohms-centimeter. ### Claim 8 (depends on 1) The nanostructure device of claim 1, wherein the doped substrate is a silicon substrate doped with a p-type doping agent and has a silicon resistivity in the range of 1-10 ohms-centimeter. ### Claim 9 (depends on 1) The nanostructure device of claim 1, wherein the insulating layer is a silicon dioxide layer having a thickness of approximately 100-300 nm. ### Claim 10 (depends on 1) The nanostructure device of claim 1, wherein the electrode is an electrically conductive electrode. ### Claim 11 (depends on 1) The nanostructure device of claim 1, wherein when the Schottky or p-n junction diode is exposed to a gaseous volatile species, I-V characteristics of the Schottky or p-n junction diode are altered such that the Schottky or p-n junction diode detects the presence of the volatile gaseous species, and wherein when the Schottky or p-n junction diode is removed from the volatile gaseous species, the I-V characteristics of the Schottky or a p-n junction diode reverse and return to their normal mode of operation such that the Schottky or a p-n junction diode detects the absence of the volatile gaseous species. ### Claim 12 (depends on 1) The nanostructure device of claim 1, wherein when the Schottky or p-n junction diode is exposed to ultra-violet radiation, I-V characteristics of the Schottky or p-n junction diode are altered such that the Schottky or p-n junction diode detects the presence of the radiation, and wherein when the Schottky or p-n junction diode is removed from the radiation, the I-V characteristics of the Schottky or a p-n junction diode reverse and return to their normal mode of operation such that the Schottky or a p-n junction diode detects the absence of the radiation. ### Claim 13 (depends on 1) The nanostructure device of claim 1, wherein the doped substrate is a silicon substrate doped with an n-type doping agent and has a silicon resistivity in the range of 1-10 ohms-centimeter. ### Claim 14 (depends on 1) The nanostructure device of claim 1, wherein the doped substrate is a silicon substrate doped with a p-type doping agent and has a silicon resistivity in the range of 1-10 ohms-centimeter. ### Claim 15 (depends on 1) The nanostructure device of claim 1, wherein the insulating layer is a silicon dioxide layer having a thickness of approximately 100-300 nm. ### Claim 16 (depends on 1) The nanostructure device of claim 1, wherein the electrode is an electrically conducting electrode. ### Claim 17 (depends on 1) The nanostructure device of claim 1, wherein the electrode formed on the insulating layer comprises at least two electrodes, wherein the at least one polymer nanofiber deposited on a top surface of the at least two electrodes and a semiconducting region between the at least two electrodes, and wherein a portion of the semiconducting region is etched such that a gaseous species to be sensed has direct physical access to both a top surface and a bottom surface of the at least one polymer nanofiber. ### Claim 18 (depends on 1) The nanostructure device of claim 1, wherein the electrode formed on the insulating layer comprises at least two electrodes, wherein the at least one polymer nanofiber deposited on a top surface of the at least two electrodes and a semiconducting region between the at least two electrodes, and wherein a portion of the semiconducting region is etched such that ultra-violet radiation to be sensed has direct physical access to both a top surface and a bottom surface of the at least one polymer nanofiber. ### Claim 19 (depends on 1) The nanostructure device of claim 1, wherein when the dual function nano-switching/sensing device is exposed to a volatile gaseous species, the at least one polymer nanofiber adsorbs at least one molecule of the volatile gaseous species thereby altering an operation of the dual function nano-switching/sensing device to allow the nano-switching/sensing device to detect the presence of the volatile gaseous species, and wherein when nano-switching/sensing device is removed from the volatile gaseous species, the at least one molecule of the volatile gaseous species is desorbed from the at least one polymer nanofiber and the nano-switching/sensing device returns to a normal mode of operation to thereby allow the nano-switching/sensing device to detect the absence of the volatile gaseous species. ### Claim 20 (depends on 1) The nanostructure device of claim 1, wherein when the dual function nano-switching/sensing device is exposed to ultra-violet radiation, the at least one polymer nanofiber adsorbs at least one photon of the radiation thereby altering an operation of the dual function nano-switching/sensing device to allow the nano-switching/sensing device to detect the presence of the radiation, and wherein when nano-switching/sensing device is removed from the radiation, the at least one photon of the radiation is emitted from the at least one polymer nanofiber and the nano-switching/sensing device returns to a normal mode of operation to thereby allow the nano-switching/sensing device to detect the absence of the radiation.