# US 9,752,928 B2 · Implement multiple pixel output for photodiode size pixels

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- Number: US 9,752,928 B2
- Document ID: US9752928B2
- Status: Granted
- Kind: B2
- Application number: 13/949,009
- Filed: 2013-07-23
- Published: 2014-01-30
- Granted: 2017-09-05
- Earliest claimed: 2012-07-24
- Assignees: Forza Silicon Corporation
- Applicants: Guang Yang; Loc Truong
- Inventors: Guang Yang; Loc Truong
- Web page: https://patentgrep.com/patent/US9752928B2

## CPC

- G01J 1/44: Electric circuits {(for command of an exposure part G03B7/02)}
- H10F 39/8027: {Geometry of the photosensitive area}
- H10F 39/8033: {Photosensitive area}
- H10F 39/8037: {the integrated elements comprising a transistor}
- G01J: MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY (light sources F21, H01J, H01K, H05B; investigating properties of materials by optical means G01N)
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

An image sensor pixel the conformist single pixel of a larger array. The image sensor pixel can be a large one, such as larger than 100 μm. The image sensor pixel has readout notes on multiple sides thereof, e.g. on to work for sides, that are symmetrically located on the pixel. The readout notes are simultaneously read out to read out a part of the image from the pixel.

## Claims

### Claim 1

An image sensor pixel, comprising:
a photosensor pixel part, having at least one extent which is 100 μm or larger;
said extent including a photocollection area, wherein the photocollection area comprises an n doped layer, buried under a surface-facing p doped layer, where the n layer is wider than, and extends beyond edges of the p layer,
a first sensing node of an n+ type on a first side of said extent, located over and directly on top of a first portion of the n layer that extends beyond the p layer, and directly abutting the p+ type photocollection area, to receive charge from the photocollection area and provide the charge to a readout circuit; and
a second sensing node of n+ type on a second side of said extent opposite to the first side of the extent, located over and directly on top of a second portion of the n layer that extends beyond the p layer and directly abutting the p+ type photocollection area, said second sensing node also connected directly to the photocollection area to receive charge from the p+ type photocollection area,
and said first and second readout parts connected directly such that charge in the photocollection area always is simultaneously received by both the first readout part and the second readout part,
so that photogenerated charge generated within the photosensor pixel part is received simultaneously by both said first sensing node and said second sensing node, and where said photogenerated charge from the first sensing node and from the second sensing node is connected to a connection that connects to a location outside the pixel.

### Claim 2 (depends on 1)

The pixel as in claim 1, further comprising a first readout circuit connected to the first sensing node, and a second readout circuit connected to the second sensing node.

### Claim 3 (depends on 1)

The pixel as in claim 1, further comprising a third sensing node on a third side of said extent and a fourth sensing node on a fourth side of said extent.

### Claim 4 (depends on 1)

The pixel as in claim 1, wherein said photosensor pixel part is a CMOS image sensor.

### Claim 5 (depends on 1)

The pixel as in claim 1, further comprising a metal wire between said first sensing node and said second sensing node, and where a single readout circuit is connected to receive output from both said first sensing node and said second sensing node.

### Claim 6 (depends on 1)

The pixel as in claim 1, wherein said readout parts are symmetrically spaced around edges of the photosensor pixel.

### Claim 7 (depends on 1)

The pixel as in claim 1, further comprising a using a metal wire connected between said first sensing node and said second sensing node, to allow a single readout circuit to be connected to receive output from both said first sensing node and said second sensing node.

### Claim 8

A method of reading pixels of an image sensor, comprising:
Operating a photosensor pixel by receiving information into a photocollection area that comprises an n doped layer, buried under a surface-facing p doped layer, where the n layer is wider than, and extends beyond edges of the p layer,
Reading out information from multiple n+ type doped taps that directly abut against two opposite sides of the p layer, and are over the n layer at locations where the n layer extends beyond the edges of the p layer,
Said multiple n+ type doped taps include at least a first sensing node and a second sensing node on opposite sides of an image sensor device, said device having at least one extent across said p doped layer which is 100 μm or larger,
said arranging being in a way that the first and second sensing nodes are connected directly to the photocollection area of the image sensor device and said first and second readout parts connected directly such that charge in the photocollection area always is simultaneously received by both the first readout part and the second readout part;
using at least one readout circut for reading out charge from said first and second sensing nodes simultaneously to receive photogenerated charge from both said first and second sensing nodes representing the same part of an image simultaneously; and
using a combination of said photogenerated charge from both said first and second readouts to represent said part of the image.

### Claim 9 (depends on 8)

The method as in claim 8, wherein said part of said image is a single pixel of a multi-pixel image.

### Claim 10 (depends on 8)

The method as in claim 8, wherein said first and second readout parts are symmetrically disposed on the pixel relative to one another.

### Claim 11 (depends on 8)

The method as in claim 8, further comprising using third and fourth readout parts to obtain photogenerated charge at the same time as from said first and second readout parts.

### Claim 12 (depends on 8)

The method as in claim 8, further comprising using a source follower in a sensing node at each of said readout parts.

### Claim 13 (depends on 8)

The method as in claim 8, wherein the image sensor pixel has a photocollection area that comprises an n layer, buried under a surface-facing p layer, and multiple n-type doped taps that connect to the buried photocollection node, where said multiple n-type doped taps include the first readout part and the second readout part.