# US 9,752,253 B2 · Epitaxial growth apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,752,253 B2 - Document ID: US9752253B2 - Status: Granted - Kind: B2 - Application number: 14/582,566 - Filed: 2014-12-24 - Published: 2015-07-02 - Granted: 2017-09-05 - Earliest claimed: 2013-12-27 - Assignees: Sumco Corporation - Applicants: Sumco Corporation - Inventors: Kan Yoshitake; Kimitaka Okamoto; Haruki Shoji - Web page: https://patentgrep.com/patent/US9752253B2 ## CPC - C30B 25/10: Heating of the reaction chamber or the substrate - C30B 29/06: Silicon - H10P 72/0436: {mainly by radiation} - C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract Disclosed herein is an epitaxial growth apparatus for growing an epitaxial layer on a surface of a wafer. The apparatus includes: a chamber in which the wafer is housed; an upper lamp group that includes a plurality of heating lamps arranged in a ring above the chamber; a lower lamp group that includes a plurality of heating lamps provided below the chamber; a reflection member that is provided inside the ring of the upper lamp group, the reflection member having a substantially cylindrical shape; and an additional reflection member that is provided inside the reflection member, the additional reflection member including a reflection surface that is substantially parallel to the surface of the wafer. The additional reflection member is provided in such a way as to close at least part of an opening of a lower end portion of the reflection member. ## Claims ### Claim 1 An epitaxial growth apparatus for growing an epitaxial layer on a surface of a wafer, the apparatus comprising: a chamber in which the wafer is housed; an upper lamp group that includes a plurality of heating lamps arranged in a ring and that is provided above the chamber; a lower lamp group that includes a plurality of heating lamps and that is provided below the chamber; a reflection member that has a substantially cylindrical shape and that is provided inside the ring of the upper lamp group; an additional reflection member that includes a reflection surface substantially parallel to the surface of the wafer and that is provided inside the reflection member; a pyrometer that is provided above the chamber and the center of the wafer and that has an optical axis extending toward the wafer; and a shield tube that has a cylindrical shape and that is provided in such a way as to encircle the optical axis of the pyrometer, wherein the reflection member is provided in such a way as to surround the optical axis of the pyrometer and the shield tube, the additional reflection member is provided in such a way as to close at least part of an opening of a lower end portion of the reflection member, and the optical axis of the pyrometer and the shield tube pass through the additional reflection member wherein inside the reflection member is a region from which any heating lamps are excluded; and wherein a position of the additional reflection member is higher than a position of a lower end of the reflection member. ### Claim 2 (depends on 1) The epitaxial growth apparatus as claimed in claim 1, wherein the additional reflection member includes: a circular plate portion that constitutes the reflection surface; and a sidewall portion that is provided in such a way as to encircle an outer periphery of the circular plate portion. ### Claim 3 (depends on 2) The epitaxial growth apparatus as claimed in claim 2, wherein the additional reflection member includes a through-hole formed at a center of the circular plate portion, and the optical axis of the pyrometer passes through the through-hole. ### Claim 4 (depends on 3) The epitaxial growth apparatus as claimed in claim 3, wherein the shield tube is inserted into the through-hole of the additional reflection member. ### Claim 5 (depends on 1) The epitaxial growth apparatus as claimed in claim 1, wherein the reflection member has a tapered portion provided in a lower end portion thereof in such a way that a diameter thereof becomes gradually smaller toward a lower side, and an outer peripheral end of the additional reflection member is in contact with an inner peripheral surface of the tapered portion. ### Claim 6 (depends on 1) The epitaxial growth apparatus as claimed in claim 1, wherein the additional reflection member is made of the same material as the reflection member. ### Claim 7 An epitaxial growth apparatus comprising: a chamber that can house a wafer; a heating source provided above the chamber; a first reflection member so provided as to be surrounded by the heating source; and a second reflection member so provided as to be surrounded by the first reflection member, a pyrometer that has an optical axis perpendicular to a main surface of the wafer; and a shield tube to surround the optical axis of the pyrometer, wherein the first reflection member includes a cylindrical surface that is substantially perpendicular to the main surface of the wafer, the second reflection member includes a flat surface that is substantially parallel to the main surface of the wafer and a through-hole through which the optical axis of the pyrometer passes, and the shield tube penetrates through the through-hole of the second reflection member wherein inside the first reflection member is a region from which any heating source are excluded; and wherein a position of the flat surface of the second reflection member is higher than a position of a lower end of the first reflection member. ### Claim 8 (depends on 7) The epitaxial growth apparatus as claimed in claim 7, wherein the first reflection member has a tapered portion that includes a tapered surface that is tapered to the main surface of the wafer. ### Claim 9 (depends on 8) The epitaxial growth apparatus as claimed in claim 8, wherein the second reflection member is in contact with the tapered portion of the first reflection member. ### Claim 10 (depends on 1) The epitaxial growth apparatus as claimed in claim 1, wherein the additional reflection member blocks a cooling air flow that travels from an upper side to a lower side via an internal space of the reflection member. ### Claim 11 (depends on 7) The epitaxial growth apparatus as claimed in claim 7, wherein the second reflection member blocks a cooling air flow that travels from an upper side to a lower side via an internal space of the first reflection member.