# US 9,752,228 B2 · Sputtering target for PVD chamber

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- Number: US 9,752,228 B2
- Document ID: US9752228B2
- Status: Granted
- Kind: B2
- Application number: 12/723,199
- Filed: 2010-03-12
- Published: 2010-10-07
- Granted: 2017-09-05
- Earliest claimed: 2009-04-03
- Assignees: Applied Materials, Inc.
- Applicants: Zhendong Liu; Rongjun Wang; Xianmin Tang; Srinivas Gandikota; Tza-Jing Gung; Muhammad M. Rasheed
- Inventors: Zhendong Liu; Rongjun Wang; Xianmin Tang; Srinivas Gandikota; Tza-Jing Gung; Muhammad M. Rasheed
- Web page: https://patentgrep.com/patent/US9752228B2

## CPC

- C23C 14/3407: {Cathode assembly for sputtering apparatus, e.g. Target}
- H01J 37/342: {Hollow targets}
- H01J 37/3423: {Shape}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)

## Abstract

Target assemblies and PVD chambers including target assemblies are disclosed. The target assembly includes a target that has a concave shaped target. When used in a PVD chamber, the concave target provides more radially uniform deposition on a substrate disposed in the sputtering chamber.

## Claims

### Claim 1

A sputtering apparatus comprising:
a chamber having a wall defining a process area including a substrate support;
a reactive gas source connected to the chamber to provide a reactive gas during processing;
a target spaced from the substrate support, the target having a front face defining sputterable target surface extending between peripheral edges of the target and the sputterable target surface defining an overall concave shape substantially between the peripheral edges, the overall concave shape defined by a substantially flat central region surrounded by a sloped region; and
an RF power source coupled to the target to sputter material from the target,
wherein the target comprises one or more of aluminum, titanium or tungsten and the target peripheral edges define a target diameter Rp and the flat central region has a diameter Rc, and the central region diameter is such that the ratio Rc/Rp is about 68.5%, the sloped region has an angle of about 7 degrees such that a thickness at the peripheral edge of the target is in the range of about ⅛ inch to about ¾ inch and is greater than a thickness at the central region, and the angle of the sloped region and Rc/Rp are configured to deposit a film of uniform thickness on a flat substrate surface.

### Claim 2 (depends on 1)

The apparatus of claim 1, wherein the sloped region extends to the peripheral edge.

### Claim 3 (depends on 1)

The apparatus of claim 1, wherein the sloped region extends to an outer peripheral front face area.

### Claim 4 (depends on 1)

The apparatus of claim 1, further comprising a DC power source coupled to the target to sputter material from the target.

### Claim 5 (depends on 3)

The apparatus of claim 3, wherein the outer peripheral front face comprises not more than about 30% of sputterable surface area.

### Claim 6 (depends on 1)

The apparatus of claim 1, the reactive gas source comprises argon with a flow rate in the range of about 20 sccm to about 40 sccm.