# US 9,751,755 B2 · Method of forming a micro-structure > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,751,755 B2 - Document ID: US9751755B2 - Status: Granted - Kind: B2 - Application number: 13/825,029 - Filed: 2010-10-21 - Published: 2013-07-11 - Granted: 2017-09-05 - Earliest claimed: 2010-10-21 - Assignees: Hewlett-Packard Development Company, L.P. - Applicants: Peter Mardilovich; Anthony M. Fuller; Qingqiao Wei - Inventors: Peter Mardilovich; Anthony M. Fuller; Qingqiao Wei - Web page: https://patentgrep.com/patent/US9751755B2 ## CPC - B81C 1/00373: {Selective deposition, e.g. printing or microcontact printing} - B81B 3/00: Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes (B81B5/00 takes precedence) - B81C 1/00031: {Regular or irregular arrays of nanoscale structures, e.g. etch mask layer (photomechanical, e.g. photolithographic, production of textured or patterned surfaces G03F7/00; lithographic processes for making patterned surfaces using printing and stamping G03F7/0002)} - C25D 1/006: {Nanostructures, e.g. using aluminium anodic oxidation templates [AAO]} - C25D 11/022: {Anodisation on selected surface areas} - C25D 11/045: {for forming AAO templates} - C25D 11/08: containing inorganic acids - C25D 11/10: containing organic acids - C25D 11/18: After-treatment, e.g. pore-sealing - C25D 11/26: of refractory metals or alloys based thereon - Y10S 977/856: including etching/cutting - Y10S 977/888: Shaping or removal of materials, e.g. etching - Y10T 428/24355: Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.] - B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01) - B81B: MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES (piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/00, H10N35/00) - C25D: PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR - Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS - Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION ## Abstract A method of forming a micro-structure involves forming a multi-layered structure including i) an oxidizable material layer on a substrate and ii) another oxidizable material layer on the oxidizable material layer. The oxidizable material layer is formed of an oxidizable material having an expansion coefficient, during oxidation, that is more than 1. The method further involves forming a template, including a plurality of pores, from the other oxidizable material layer, and growing a nano-pillar inside each pore. The nano-pillar has a predefined length that terminates at an end. A portion of the template is selectively removed to form a substantially even plane that is oriented in a position opposed to the substrate. A material is deposited on at least a portion of the plane to form a film layer thereon, and the remaining portion of the template is selectively removed to expose the nano-pillars. ## Claims ### Claim 1 A micro-structure, consisting of: a substrate; a non-oxidized portion of an oxidizable material layer formed on the substrate; an oxide layer formed on the non-oxidized portion and from the oxidizable material layer; metal oxide nano-pillars extending from the oxide layer and formed from the oxidizable material layer, wherein each of the plurality of nano-pillars has a length that terminates at an end such that the plurality of nano-pillars ends, together, defines a substantially even plane oriented in a position that is opposed to the substrate; an empty space separating each nano-pillar from each adjacent nano-pillar; and a film layer formed on at least a portion of the substantially even plane. ### Claim 2 (depends on 1) The micro-structure as defined in claim 1 wherein: the oxidizable material is chosen from tantalum, tungsten, niobium, and titanium; the non-oxidized portion of the oxidizable material is tantalum when the oxidizable material is tantalum, tungsten when the oxidizable material is tungsten, niobium when the oxidizable material is niobium, or titanium when the oxidizable material is titanium; and the oxide layer and the metal oxide nano-pillars are tantalum pentoxide when the oxidizable material is tantalum, tungsten oxide when the oxidizable material is tungsten, niobium oxide when the oxidizable material is niobium, or titanium oxide when the oxidizable material is titanium. ### Claim 3 (depends on 1) The micro-structure as defined in claim 1 wherein each of the plurality of metal oxide nano-pillars includes a pitch ranging from about 30 nm to about 500 nm, a diameter ranging from about 10 nm to about 350 nm, a height ranging from about 10 nm to about 1000 nm, and an aspect ratio that is greater than 10. ### Claim 4 (depends on 1) The micro-structure as defined in claim 1 wherein the film layer-includes a surface modified by a material chosen from aluminum oxide, zirconium oxide, titanium dioxide, silicon dioxide, tungsten oxide, zinc oxide, hafnium oxide, and combinations thereof. ### Claim 5 (depends on 1) The micro-structure as defined in claim 1 wherein the micro-structure includes at least one micro-cluster having a portion of the film layer and a portion of the plurality of metal oxide nano-pillars. ### Claim 6 (depends on 1) The micro-structure as defined in claim 1 wherein the film layer includes at least one opening defined therein. ### Claim 7 (depends on 1) The micro-structure as defined in claim 1 wherein each of the plurality of metal oxide nano-pillars is uniform in at least one of diameter, pitch, or height. ### Claim 8 (depends on 1) The micro-structure as defined in claim 1 wherein the film layer is selected from the group consisting of zinc oxide, aluminum nitride, and lead zirconate titanate. ### Claim 9 (depends on 8) The micro-structure as defined in claim 8, further comprising inter-digitated electrodes formed on the film layer. ### Claim 10 (depends on 1) The micro-structure as defined in claim 1 wherein the substrate is selected from the group consisting of silicon, silicon having an insulating layer thereon, glass, quartz, stainless steel, plastic, and combinations thereof. ### Claim 11 (depends on 1) The micro-structure as defined in claim 1 wherein the nano-pillars comprise an amorphous oxide material. ### Claim 12 (depends on 1) The micro-structure as defined in claim 1 wherein the film layer has a thickness ranging in size from about 10 nm to about 5 μm. ### Claim 13 (depends on 1) The micro-structure as defined in claim 1 wherein the film layer has a thickness ranging in size from about 20 nm to about 500 nm.