# US 9,751,753 B2 · Integration of active devices with passive components and MEMS devices > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,751,753 B2 - Document ID: US9751753B2 - Status: Granted - Kind: B2 - Application number: 15/256,340 - Filed: 2016-09-02 - Published: 2016-12-22 - Granted: 2017-09-05 - Earliest claimed: 2015-04-02 - Assignees: Newport Fab, LLC - Applicants: Newport Fab, LLC - Inventors: Michael J. DeBar; David J. Howard; Jeff Rose - Web page: https://patentgrep.com/patent/US9751753B2 ## CPC - B81C 1/00246: {Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate} - B81C 1/00833: {Methods for preserving structures not provided for in groups B81C1/00785 - B81C1/00825} - B81B 2207/015: the micromechanical device and the control or processing electronics being integrated on the same substrate - B81C 2203/0771: Stacking the electronic processing unit and the micromechanical structure - B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01) - B81B: MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES (piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/00, H10N35/00) ## Abstract Integration of active devices with passive components and MEMS devices is disclosed. An integrated semiconductor structure includes an active device having a device top electrode connected to a conductive jumper by a device-side via/interconnect metal stack. The integrated semiconductor structure also includes a passive component having a component bottom plate connected to the conductive jumper by a component side via/interconnect metal stack. The component bottom plate is situated at an intermediate metal level higher than the device top electrode, and the conductive jumper is situated at a connecting metal level higher than the component bottom plate. The conductive jumper reduces undesirable charge flow into the active device during fabrication of the passive component. The passive component can be, for example, a MEMS device. ## Claims ### Claim 1 A method of manufacturing an integrated semiconductor structure, the method comprising: forming an active device in a semiconductor substrate, the active device having a device top electrode; forming a first portion of a device-side via/interconnect metal stack, wherein the first portion of the device side via/interconnect metal stack is coupled to the device top electrode; forming a first portion of a passive component; forming a component-side via/interconnect metal stack, wherein the component-side via/interconnect metal stack is coupled to the first portion of said passive component; forming a second portion of said device-side via/interconnect metal stack, wherein the second portion of the device side via/interconnect metal stack is coupled to the first portion of the device side via/interconnect metal stack; and then forming a conductive jumper to connect said component-side via/interconnect metal stack to said second portion of said device-side via/interconnect metal stack. ### Claim 2 (depends on 1) The method of claim 1, wherein the first portion of said passive component is situated at an intermediate metal level higher than the device top electrode of said active device. ### Claim 3 (depends on 1) The method of claim 1, wherein said conductive jumper is situated at a connecting metal level higher than the first portion of said passive component. ### Claim 4 (depends on 3) The method of claim 3, further comprising forming a second portion of the passive component over the first portion of the passive component, wherein the second portion of the passive component is situated at a metal layer below said connecting metal level. ### Claim 5 (depends on 3) The method of claim 3, further comprising forming a second portion of the passive component over the first portion of the passive component, wherein the second portion of the passive component is situated at a same level as said connecting metal level. ### Claim 6 (depends on 1) The method of claim 1, wherein said active device is configured to provide a driving signal to the first portion of said passive component through said conductive jumper. ### Claim 7 (depends on 1) The method of claim 1, wherein said passive component is a microelectromechanical systems (MEMS) device. ### Claim 8 (depends on 7) The method of claim 7, wherein said MEMS device comprises an actuation plate. ### Claim 9 (depends on 7) The method of claim 7, wherein said MEMS device is a variable capacitor. ### Claim 10 (depends on 1) The method of claim 1, wherein said active device comprises at least one CMOS transistor. ### Claim 11 (depends on 1) The method of claim 1, wherein the forming a first portion of the device-side via/interconnect metal stack is formed through a first set of dielectric layers, the method further comprising forming an isolation structure within the first set of dielectric layers. ### Claim 12 (depends on 11) The method of claim 11, wherein forming the isolation structure comprises forming a ground shield plate and shield sidewalls that extend from the ground shield plate. ### Claim 13 (depends on 11) The method of claim 11, wherein the isolation structure is located between the semiconductor substrate and the first portion of the passive component. ### Claim 14 (depends on 1) The method of claim 1, further comprising simultaneously forming at least portions of the passive component, the component-side via/interconnect metal stack and the second portion of the device-side via/interconnect metal stack. ### Claim 15 (depends on 1) The method of claim 1, further comprising thermally and electrically isolating the first portion of the passive component from the active device during fabrication of the first portion of the passive component. ### Claim 16 (depends on 1) The method of claim 1, further comprising forming a second portion of the passive component over the first portion of the passive component. ### Claim 17 (depends on 16) The method of claim 16, further comprising forming the second portion of the passive component and the conductive jumper from a common metal layer. ### Claim 18 (depends on 3) The method of claim 3, further comprising forming a second portion of the passive component over the first portion of the passive component, wherein the second portion of the passive component is situated above said connecting metal level. ### Claim 19 (depends on 1) The method of claim 1, wherein the conductive jumper forms an electrical path between the passive component and the active device.