Dry etching method of manufacturing semiconductor light emitting device substrate
AssigneeOji Holdings Corporation
InventorsYoshihisa Hatta, Kei Shinotsuka, Kotaro Dai, Yasuhito Kajita
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Abstract
A method of manufacturing a semiconductor light emitting device, including arranging a plurality of particles in a monolayer on a substrate, dry etching the plurality of particles arranged to provide a void between the particles in a condition IN which the particles are etched while the substrate is not substantially etched; and dry etching the substrate using the plurality of particles after the particle etching step as an etching mask, thereby forming an uneven structure on one surface of the substrate.
Claims9
A method of manufacturing a semiconductor light emitting device substrate, the method comprising:
- arranging a plurality of particles in a monolayer on a substrate so that an arrangement deviation D (%) defined by a formula (1) shown below is not greater than 15%;
- dry etching said plurality of particles arranged to provide a void between the particles in a condition in which said particles are etched while said substrate is not substantially etched;
- and
- dry etching said substrate by using the plurality of particles after said particle etching as an etching mask, thereby forming an uneven structure on one side of said substrate:
- D[%]=|B−A|×100/A (1)
- with a proviso that in formula (1), A denotes an average particle diameter of particles, B denotes a most frequent pitch between particles;
- and
- |B−A| denotes an absolute value of difference between A and B,
- wherein an absolute difference (TTV) between a maximum thickness and a minimum thickness of said substrate is from 5 μm to 30 μm,
- a difference (WARP) between a maximum value and a minimum value of deviation from a reference plane is from 10 μm to 50 μm, and an absolute value (|BOW|) of a distance from a reference plane at a central portion of the substrate is from 10 μm to 50 μm.
A method of manufacturing a semiconductor light emitting device substrate, the method comprising:
- arranging a plurality of particles in a monolayer on a substrate;
- dry etching said plurality of particles arranged to provide a void between the particles in a condition in which said particles are etched while said substrate is not substantially etched;
- and
- dry etching said substrate by using the plurality of particles after said particle etching as an etching mask, thereby forming an uneven structure on one side of said substrate,
- wherein said substrate is sapphire, said particles are silica, said particle etching uses at least one type of gas selected from the group consisting of CF4, SF6, CHF3, C2F6, C3F8, CH2F2, O2 and NF3 as an etching gas, and said substrate etching uses at least one type of gas selected from the group consisting of Cl2, Br2, BCl3, SiCl4, HBr, HI, HCl and Ar as an etching gas, and
- wherein an absolute difference (TTV) between a maximum thickness and a minimum thickness of said substrate is from 5 μm to 30 μm,
- a difference (WARP) between a maximum value and a minimum value of deviation from a reference plane is from 10 μm to 50 μm, and an absolute value (|BOW|) of a distance from a reference plane at a central portion of the substrate is from 10 μm to 50 μm.
Dependencies are inferred from the claim text.