Semiconductor device having a field-effect structure and a nitrogen concentration profile

A semiconductor device, comprising:

• a silicon semiconductor body having a main surface, a maximum oxygen concentration of less than about 3*1017 cm−3 throughout the entire silicon semiconductor body, and a nitrogen concentration which is lower than about 2*1014 cm−3 at least in a first portion of the silicon semiconductor body, the first portion extending from the main surface to a depth of about 50 μm, wherein the nitrogen concentration increases with a distance from the main surface at least in the first portion;
• a field-effect structure arranged next to the main surface;
• an insulated conductive region arranged in a vertical trench which extends from the main surface into the silicon semiconductor body to a first depth;
• and
• an n-type field-stop region in the silicon semiconductor body and comprising protons as donors and a nitrogen concentration which is lower than about 2*1014 cm−3, the field-stop region adjoining a drift region in the silicon semiconductor body and comprising a higher doping concentration than the drift region,
• wherein the semiconductor device is implemented as a vertical semiconductor device comprising a first load metallization arranged on the main surface and a second load metallization opposite the first load metallization,
• wherein the silicon semiconductor body is cut from a drawn rod of a magnetic Czochralski silicon material,
• wherein the silicon semiconductor body is implemented as an IGBT.