Resist overlayer film forming composition for lithography and method for producing semiconductor device using the same

A resist overlayer film forming composition comprising:

• a polymer including an organic group including a linear or branched saturated alkyl group having a carbon atom number of 1 to 10, in which some or all of hydrogen atoms thereof are substituted with fluorine atoms, and
• an optionally substituted C8-16 ether compound as a solvent,
• wherein the polymer includes a unit structure of any one of (Formula 1-1-1) to (Formula 1-4-1) below:
• in (Formula 1-1-1) to (Formula 1-4-1), Ar1 is an organic group including a C6-18 aromatic ring;
• Ar2 is a methylene group, a tertiary carbon atom, or an organic group including a C6-18 aromatic ring optionally bonded with Ar1 through a methylene group or a tertiary carbon atom;
• the organic group including the aromatic ring included in Ar1 or Ar2 includes an organic group including a linear or branched saturated alkyl group having a carbon atom number of 1 to 10, in which some or all of hydrogen atoms thereof are substituted with fluorine atoms, where the number of the organic group including a linear or branched saturated alkyl group having a carbon atom number of 1 to 10 included in Ar1 or Ar2 is an integer of 1 to 10;
• and a hydrogen atom of the aromatic ring in Ar1 or Ar2 is optionally substituted with a hydroxy group, a halogen atom, a carboxy group, a nitro group, a cyano group, a methylenedioxy group, an acetoxy group, a methylthio group, a C1-9 alkoxy group, an amino group having a hydrogen atom optionally substituted with a C1-3 linear alkyl group, a linear, branched, or cyclic saturated alkyl group having a carbon atom number of 1 to 6 or a linear or branched alkyl halide group having a carbon atom number of 1 to 6 in which a hydrogen atom is optionally substituted with a hydroxy group, or a combination of these groups, where the number of substituents for the hydrogen atom of the aromatic ring in Ar1 or Ar2 is an integer of 0 to 10.