Semiconductor packaging structure and process

A method of manufacturing a semiconductor device, the method comprising:

• dispensing a first thermal interface material onto a first side of a first substrate, wherein a second substrate is bonded to the first side of the first substrate prior to the dispensing the first thermal interface material;
• placing a ring onto the first thermal interface material, wherein the second substrate extends further from the first substrate than the ring;
• applying an underfill material between the first substrate and the second substrate, wherein after the applying the underfill material the underfill material extends in a first direction from a first point to physically contact the first thermal interface material, the first point being between the first substrate and the second substrate, and wherein the underfill material extends in a second direction from the first point only partially towards the first thermal interface material;
• and
• attaching a lid over the first substrate and the second substrate, the lid being in thermal connection with the ring.

A method of manufacturing a semiconductor device, the method comprising:

• bonding a first substrate to a second substrate, wherein the first substrate comprises a first section that laterally extends beyond the second substrate;
• bonding a third substrate to the second substrate, wherein the second substrate comprises a second section that laterally extends beyond the third substrate;
• placing a first thermal interface material on the second substrate in the second section;
• dispensing a first underfill material between the second substrate and the third substrate after the placing the first thermal interface material, wherein the first thermal interface material prevents the first underfill material from flowing in the first direction and wherein at an end of the dispensing the first underfill material the first underfill material contacts the first thermal interface material at a point that is located a first distance away from the first substrate, the first thermal interface material extending away from the first substrate a second distance greater than the first distance;
• and
• placing a lid in thermal connection with the first thermal interface material, the third substrate, and the first section of the first substrate, wherein the lid has a first thickness over the first section of the first substrate, a second thickness different from the first thickness over the first thermal interface material, and a third thickness different from the first thickness and the second thickness over the third substrate.