Active matrix substrate manufacturing method, display apparatus manufacturing method, and display apparatus
AssigneeSharp Kabushiki Kaisha
InventorKazuhide Tomiyasu
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Abstract
According to an embodiment of the present invention, an active matrix substrate manufacturing method includes: a step (a) of forming a thin film transistor on a substrate; a step (b) of forming an interlayer insulating layer covering the thin film transistor; a step (c) of forming a first electrode after the step (b); a step (d) of forming, after the step (c), a photospacer by applying a photosensitive resin material to the substrate and patterning the photosensitive resin material; and a step (e) of performing, after the step (d), plasma processing using a gas that contains a fluorine-based gas but does not contain oxygen gas.
Claims6
A method of manufacturing an active matrix substrate that includes a substrate, and a thin film transistor and photospacer supported on the substrate, the method comprising:
- a step (a) of forming the thin film transistor on the substrate;
- a step (b) of forming an interlayer insulating layer covering the thin film transistor;
- a step (c) of forming a first electrode after the step (b);
- a step (d) of forming, after the step (c), the photospacer by applying a photosensitive resin material to the substrate and patterning said photosensitive resin material;
- and
- a step (e) of performing, after the step (d), plasma processing using a gas that contains a fluorine-based gas but that does not contain oxygen gas,
- wherein the method further comprises, after the step (b) and before the step (c):
- a step (b1) of forming an organic insulating layer on the interlayer insulating layer;
- a step (b2) of forming a second electrode on the organic insulating layer;
- and
- a step (b3) of forming a dielectric layer on the second electrode,
- wherein in the step (c), the first electrode is formed on the dielectric layer,
- wherein the step (b2) includes a step of forming a conductive film on the organic insulating layer so as to connect to the organic insulating layer and a step of forming the second electrode and forming another conductive layer separate from the second electrode by patterning the conductive film, and
- wherein the step (b3) includes a step of forming a dielectric film on the second electrode and on the conductive layer and a step of patterning the dielectric film so as to cover the second electrode but expose the conductive layer and the organic insulating layer in a periphery of the conductive layer.
A method of manufacturing an active matrix substrate that includes a substrate, and a thin film transistor and photospacer supported on the substrate, the method comprising:
- a step (a) of forming the thin film transistor on the substrate;
- a step (b) of forming an interlayer insulating layer covering the thin film transistor;
- a step (c) of forming a first electrode after the step (b);
- a step (d) of forming, after the step (c), the photospacer by applying a photosensitive resin material to the substrate and patterning said photosensitive resin material;
- and
- a step (e) of performing, after the step (d), plasma processing using a gas that contains a fluorine-based gas but that does not contain oxygen gas;
- wherein the method further comprises after the step (b) and before the step (c):
- a step (b1) of forming an organic insulating layer on the interlayer insulating layer;
- a step (b2) of forming a second electrode on the organic insulating layer;
- and
- a step (b3) of forming a dielectric layer on the second electrode,
- wherein in the step (c), the first electrode is formed on the dielectric layer,
- wherein the step (b2) includes a step of forming a conductive film on the organic insulating layer so as to connect to the organic insulating layer and a step of forming the second electrode and forming another conductive layer separate from the second electrode by patterning the conductive film,
- wherein the step (b3) includes a step of forming a dielectric film on the second electrode and on the conductive layer and a step of patterning the dielectric film so as to cover the second electrode but expose the conductive layer and the organic insulating layer in a periphery of the conductive layer,
- wherein in the step (e), the plasma processing is performed substantially using only a fluorine-based gas, and
- wherein the fluorine-based gas is a CF4 gas or a C2F6 gas.
A method of manufacturing an active matrix substrate that includes a substrate, and a thin film transistor and photospacer supported on the substrate, the method comprising:
- a step (a) of forming the thin film transistor on the substrate;
- a step (b) of forming an interlayer insulating layer covering the thin film transistor;
- a step (c) of forming a first electrode after the step (b);
- a step (d) of forming, after the step (c), the photospacer by applying a photosensitive resin material to the substrate and patterning said photosensitive resin material;
- and
- a step (e) of performing, after the step (d), plasma processing using a gas that contains a fluorine-based gas but that does not contain oxygen gas;
- wherein the method further comprises after the step (b) and before the step (c):
- a step (b1) of forming an organic insulating layer on the interlayer insulating layer;
- a step (b2) of forming a second electrode on the organic insulating layer;
- and
- a step (b3) of forming a dielectric layer on the second electrode,
- wherein in the step (c), the first electrode is formed on the dielectric layer,
- wherein the step (b2) includes a step of forming a conductive film on the organic insulating layer so as to connect to the organic insulating layer and a step of forming the second electrode and forming another conductive layer separate from the second electrode by patterning the conductive film,
- wherein the step (b3) includes a step of forming a dielectric film on the second electrode and on the conductive layer and a step of patterning the dielectric film so as to cover the second electrode but expose the conductive layer and the organic insulating layer in a periphery of the conductive layer, and
- wherein the fluorine-based gas is a CF4 gas or a C2F6 gas.
Dependencies are inferred from the claim text.