Back to results
US 9,726,547 B2Granted
Microbolometer devices in CMOS and BiCMOS technologies
AssigneeGlobalfoundries Inc.
InventorsQizhi Liu, Anthony K. Stamper, Ronald F. Waller
Life of this patent
Estimating the term…
Abstract
A microbolometer device integrated with CMOS and BiCMOS technologies and methods of manufacture are disclosed. The method includes forming a microbolometer unit cell, comprises damaging a portion of a substrate to form a damaged region. The method further includes forming infrared (IR) absorbing material on the damaged region. The method further includes isolating the IR absorbing material by forming a cavity underneath the IR absorbing material.
Claims20
A method of forming a microbolometer unit cell, comprising:
- damaging a portion of a substrate to form a damaged region of the substrate;
- forming infrared (IR) absorbing material on the damaged region;
- and
- isolating the IR absorbing material by forming a cavity underneath the IR absorbing material.
1 more element
A method, comprising:
- providing a damage region in a substrate;
- forming a patterned IR absorbing material on the damaged region;
- forming vias through the patterned IR absorbing material and into the substrate;
- forming a cavity in the substrate through the vias, under the IR absorbing material;
- and
- electrically connecting a wire to the IR absorbing material.
3 more elements
A structure comprising:
- a substrate having a damaged region;
- a microbolometer of a patterned IR absorbing material provided on the damaged region;
- and
- a cavity formed in the substrate under the damaged region.
1 more element
Dependencies are inferred from the claim text.