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US 9,721,794 B2Granted
Hardmask composition and method of forming patterning by using the hardmask composition
AssigneeSamsung Electronics Co., Ltd.
InventorsHyeonjin Shin, Sangwon Kim, Seongjun Park
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Abstract
Example embodiments relate to a hardmask composition and/or a method of forming a fine pattern by using the hardmask composition, wherein the hardmask composition includes at least one of a two-dimensional layered nanostructure and a precursor thereof, and a solvent, and an amount of the at least one of a two-dimensional layered nanostructure and the precursor is about 0.01 part to about 40 parts by weight based on 100 parts by weight of the hardmask composition.
Claims7
A hardmask composition comprising:
- a two-dimensional layered nanostructure;
- and
- a solvent,
- wherein an amount of the at least one of the two-dimensional layered nanostructure is about 0.01 part to about 40 parts by weight based on 100 parts by weight of the hardmask composition, and the two-dimensional layered nanostructure is at least one of a hexagonal boron nitride derivative, a metal chalcogenide-based material, and a metal oxide, the hexagonal boron nitride derivative being at least one of a hexagonal boron nitride (h-BN) and a hexagonal boron carbonitride (h-BxCyNz), where x+y+z=3, the metal chalcogenide-based material including one metal element from tungsten sulfide (WS2) and molybdenum sulfide (MoS2), the metal oxide including at least one of MoO3, WO3, and V2O5, a thickness of the two-dimensional layered nanostructure being in a range of about 0.34 nm to about 100 nm, and the two-dimensional layered nanostructure including one layer to three hundred layers.
1 more element
Dependencies are inferred from the claim text.